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FODM291C

ON Semiconductor

Phototransistor Optocoupler

DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin P...


ON Semiconductor

FODM291C

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Description
DATA SHEET www.onsemi.com Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package FODM291 Series The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half−pitch, mini−flat, 4−pin package. The lead pitch is 1.27 mm. Features Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°C ♦ FODM291A − 80 to 160% ♦ FODM291B − 130 to 260% ♦ FODM291C − 200 to 400% ♦ FODM291D − 300 to 600% Safety and Regulatory Approvals: ♦ UL1577, 3750 VACRMS for 1 min ♦ DIN EN/IEC60747−5−5, 565 V Peak Working Insulation Voltage (Pending) Applicable to Infrared Ray Reflow, 260°C Typical Applications Primarily Suited for DC−DC Converters For Ground Loop Isolation, Signal to Noise Isolation Communications – Adapters, Chargers Consumer – Appliances, Set Top Boxes Industrial – Power Supplies, Motor Control, Programmable Logic Control MFP4 2.7x4.4, 1.27P CASE 100EB MARKING DIAGRAM 291x 1. ON = Corporate Logo 2. 291x = Device Number 3. V = DIN EN/IEC60747−5−5 Option 4. X = One−Digit Year Code 5. YY = Digit Work Week 6. R1 = Assembly Package Code PIN CONNECTIONS ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2022 1 September, 2022 − Rev. 0 Publication Order Number: FODM291/D FODM291 Series SAFETY AND INSULATIONS RATING As per DIN EN/IEC 60747−5−5, this optoc...




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