FCD360N65S3R0

FCD360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features 700 V @ TJ = 150_C Typ. RDS(on) = 310 mW Ultra Low Gate Charge (Typ. Qg = 18 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 173 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter www.onsemi.com VDSS 650 V RDS(ON) MAX 360 mW @ 10 V ID MAX 10 A D G S D G S D−PAK TO−252 CASE 369AS MARKING DIAGRAM $Y&Z&3&K FCD360 N65S3R0 $Y &Z &3 &K FCD360N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2017 1 August, 2019 − Rev. 5 Publication Order Number: FCD360N65S3R0/D FCD360N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless...