NVH4L110N65S3F

MOSFET – Single N-Channel, SUPERFET) III, FRFET) 650 V, 30 A, 110 mW NVH4L110N65S3F Features Ultra Low Gate Charge & Low Effective Output Capacitance Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS Gate−to−Source Voltage − DC VGSS Gate−to−Source Voltage − AC (f > 1 Hz) VGSS Drain Current − Continuous (TC = 25°C) ID Drain Current − Continuous (TC = 100°C) ID Drain Current − Pulsed (Note 3) IDM Power Dissipation (TC = 25°C) PD Power Dissipation − Derate Above 25°C PD Operating Junction and Storage Temperature Range TJ, TSTG 650 ±30 ±30 30 19.5 69 240 1.92 −55 to +150 V V V A A A W W/°C °C Single Pulsed Avalanche Energy (Note 4) Repetitive Avalanche Energy (Note 3) MOSFET dv/dt EAS EAR dv/dt 380 mJ 2.4 mJ 100 V/ns Peak Diode Recovery dv/dt (Note 5) dv/dt 50 V/ns Max. Lead Temperature for Soldering Purposes TL (1/8″ from case for 5 s) 300 °C THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction−to−Case, Max. (Notes 1, 2) Symbol RqJC Value 0.52 Unit °C/W Thermal Resistance, Junction−to−Ambient, Max. (Notes 1, 2) RqJA 40 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be...