FDMS86101DC

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features Shielded Gate MOSFET Technology DUAL COOL Top Side Cooling PQFN package Max RDS(on) = 7.5 mW at VGS = 10 V, ID = 14.5 A Max RDS(on) = 12 mW at VGS = 6 V, ID = 11.5 A High performance technology for extremely low RDS(on) 100% UIL Tested RoHS Compliant Typical Applications Primary DC−DC MOSFET Secondary Synchronous Rectifier Load Switch DATA SHEET www.onsemi.com ELECTRICAL CONNECTION S D S D S D G D Pin 1 N-Channel MOSFET DDDD GSS S Pin 1 Top Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG MARKING DIAGRAM ÉÉÉÉ2HÉÉÉÉAYÉÉÉÉWZ 2H = Specific Device Code A = Assembly Location Y = Year W = Work Week Z = Assembly Lot Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2013 1 January, 2023 − Rev. 4 Publication Order Number: FDMS86101DC/D FDMS86101DC PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† 86101 FDMS86101DC UDFN8 ...