NTE4151P

NTA4151P, NTE4151P MOSFET – Single, P-Channel, Small Signal, Gate Zener, SC-75, SC-89 -20 V, -760 mA Features Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) SC−75 Standard Gullwing Package ESD Protected Gate These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications High Side Load Switch DC−DC Conversion Small Drive Circuits Battery Operated Systems such as Cell Phones, PDAs, Digital Cameras, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Units Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State VDSS VGS ID −20 V ±6.0 V −760 mA Power Dissipation (Note 1) PD SC−75 Steady State SC−89 mW 301 313 Pulsed Drain Current tp =10 ms Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 in from case for 10 s) IDM TJ, TSTG IS TL ±1000 mA −55 to °C 150 −250 mA 260 °C Gate−to−Source ESD Rating − ESD 1800 V (Human Body Model, Method 3015) THERMAL RESISTANCE RATINGS Junction−to−Ambient − Steady State (Note 1) SC−75 SC−89 RqJA °C/W 415 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 ...