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NTLUS020N03C

ON Semiconductor

N-Channel MOSFET

NTLUS020N03C MOSFET – Power, Single, N-Channel, mCool, UDFN6, 1.6x1.6x0.55 mm 30 V, 13 mW, 8.2 A Features • UDFN Packa...


ON Semiconductor

NTLUS020N03C

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Description
NTLUS020N03C MOSFET – Power, Single, N-Channel, mCool, UDFN6, 1.6x1.6x0.55 mm 30 V, 13 mW, 8.2 A Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving Ultra Low RDS(on) These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Power Load Switch Wireless Charging DC−DC Converters Motor Drive MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V Continuous Drain TA = 25°C ID Current RθJA (Note 1, 3) Steady TA = 85°C State Power Dissipation TA = 25°C PD RθJA (Note 1, 3) 8.2 A 5.9 1.52 W Continuous Drain TA = 25°C ID Current RθJA (Note 2, 3) Steady TA = 85°C State Power Dissipation TA = 25°C PD RθJA (Note 2, 3) 5.3 A 3.8 0.65 W Pulsed Drain Current tp = 10 ms IDM 24 A Operating Junction and Storage Temperature TJ, TSTG -55 to °C 150 Lead Temperature for Soldering Purposes TL 260 °C (1/8″ from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient – Steady State (Note 1, 3) Junction-to-Ambient – Steady State min Pad (Note 2, 3) RqJA RqJA 82.5 194.8 °C/W 1...




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