FDZ1905PZ

MOSFET – P-Channel, POWERTRENCH), Common Drain: 1.5 V, WLCSP -20 V, -3 A, 126 mW FDZ1905PZ General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features two common drain P−channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced 1.5 V POWERTRENCH process with state of the art “low pitch” WLCSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra−low profile packaging, low gate charge, and low rS1S2(on). Features Max rS1S2(on) = 126 mW at VGS = –4.5 V, IS1S2 = –1 A Max rS1S2(on) = 141 mW at VGS = –2.5 V, IS1S2 = –1 A Max rS1S2(on) = 198 mW at VGS = –1.8 V, IS1S2 = –1 A Max rS1S2(on) = 303 mW at VGS = –1.5 V, IS1S2 = –1 A Occupies only 1.5 mm2 of PCB area, less than 50% of the area of 2 x 2 BGA Ultra−thin package: less than 0.65 mm height when mounted to PCB High power and current handling capability HBM ESD protection level > 4 kV (Note 3) This Device is Pb−Free and is RoHS Compliant www.onsemi.com S1 G1 G2 S2 P−Channel MOSFET PIN 1 S1 S1 G1 G2 S2 S2 BOTTOM TOP WLCSP6 1.5x1x0.6 CASE 567PW MARKING DIAGRAM &Y 5&X &. 5 = Specific Device Code &Y = Year Date Code &X = Weekly Date Code &. = Pin Mark ORDERING...