FCP165N65S3

FCP165N65S3 MOSFET – Power, N-Channel, SUPERFET III, Easy-Drive 650 V, 19 A, 165 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy−drive series helps manage EMI issues and allows for easier design implementation. Features 700 V @ TJ = 150°C Typ. RDS(on) = 140 mW Ultra Low Gate Charge (Typ. Qg = 39 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 341 pF) 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant Applications Computing / Display Power Supplies Telecom / Server Power Supplies Industrial Power Supplies Lighting / Charger / Adapter www.onsemi.com VDSS 650 V RDS(ON) MAX 165 mW @ 10 V ID MAX 19 A D G S POWER MOSFET GD S TO−220 CASE 340AT MARKING DIAGRAM $Y&Z&3&K FCP 165N65S3 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 $Y &Z &3 &K FCP165N65S3 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCP165N65S3/D FCP165N65S3 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless o...