Document
NTHL033N65S3HF
MOSFET – Power, N‐Channel, SUPERFET III, FRFET
650 V, 70 A, 33 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability.
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (Typ. Qg = 188 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant
Applications
• Telecom / Server Power Supplies • Industrial Power Supplies • EV Charger • UPS / Solar
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 33 mW @ 10 V
ID MAX 70 A
D
G S
GD S TO−247 long leads CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K NTHL033 N65S3HF
© Semiconductor Components Industries, LLC, 2018
May, 2019 − Rev. 1
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
NTHL033N65S3HF = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
NTHL033N65S3HF/D
NTHL033N65S3HF
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source Voltage
− DC − AC (f > 1 Hz)
650
V
±30
V
±30
ID
IDM EAS IAS EAR dv/dt
Drain Current
Drain Current Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt
− Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1)
70 53 175 1250 12 5.0 100
A
A mJ A mJ V/ns
Peak Diode Recovery dv/dt (Note 3)
50
PD
Power Dissipation
(TC = 25°C) − Derate Above 25°C
500
W
4.0
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 12 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 35 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC RqJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
Value 0.25 40
Unit _C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
NTHL033N65S3HF NTHL033N65S3HF
TO−247
Packing Method Tube
Reel Size N/A
Tape Width N/A
Quantity 30 Units
www.onsemi.com 2
NTHL033N65S3HF
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 15 mA, Referenced to 25_C
650 700
0.63
V V V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V
10
mA
263
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 2.5 mA VGS = 10 V, ID = 35 A VDS = 20 V, ID = 35 A
3.0
5.0
V
28
33
mW
49
S
Ciss Coss
Input Capacitance Output Capacitance
6720
pF
VDS = 400 V, VGS = 0 V, f = 1 MHz
159
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
1568
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
292
pF
Qg(tot)
Total Gate Charge at 10V
188
nC
Qgs
Gate to Source Gate Charge
VDS = 400 V, ID = 35 A, VGS = 10 V (Note 4)
55
nC
Qgd
Gate to Drain “Miller” Charge
73
nC
ESR
Equivalent Series Resistance
f = 1 MHz
1.1
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 35 A, VGS = 10 V, Rg = 2.2 W
(Note 4)
43
ns
35
ns
110
ns
28
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
ISM
Maximum Pulsed Source to Drain Diode Forward Current
VSD
Source to Drain Diode Forward
Voltage
VGS = 0 V, ISD = 35 A
70
A
175
A
1.3
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery.