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NTHL033N65S3HF Dataheets PDF



Part Number NTHL033N65S3HF
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel MOSFET
Datasheet NTHL033N65S3HF DatasheetNTHL033N65S3HF Datasheet (PDF)

NTHL033N65S3HF MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 70 A, 33 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for .

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NTHL033N65S3HF MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 70 A, 33 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 28 mW • Ultra Low Gate Charge (Typ. Qg = 188 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 1568 pF) • 100% Avalanche Tested • These Devices are Pb−Free and are RoHS Compliant Applications • Telecom / Server Power Supplies • Industrial Power Supplies • EV Charger • UPS / Solar www.onsemi.com VDSS 650 V RDS(ON) MAX 33 mW @ 10 V ID MAX 70 A D G S GD S TO−247 long leads CASE 340CX MARKING DIAGRAM $Y&Z&3&K NTHL033 N65S3HF © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. 1 $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NTHL033N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: NTHL033N65S3HF/D NTHL033N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage − DC − AC (f > 1 Hz) 650 V ±30 V ±30 ID IDM EAS IAS EAR dv/dt Drain Current Drain Current Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 1) MOSFET dv/dt − Continuous (TC = 25°C) − Continuous (TC = 100°C) − Pulsed (Note 1) 70 53 175 1250 12 5.0 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Power Dissipation (TC = 25°C) − Derate Above 25°C 500 W 4.0 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 12 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 35 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC RqJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. Value 0.25 40 Unit _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package NTHL033N65S3HF NTHL033N65S3HF TO−247 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 Units www.onsemi.com 2 NTHL033N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 15 mA, Referenced to 25_C 650 700 0.63 V V V/_C IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ON CHARACTERISTICS VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V 10 mA 263 ±100 nA VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS VGS = VDS, ID = 2.5 mA VGS = 10 V, ID = 35 A VDS = 20 V, ID = 35 A 3.0 5.0 V 28 33 mW 49 S Ciss Coss Input Capacitance Output Capacitance 6720 pF VDS = 400 V, VGS = 0 V, f = 1 MHz 159 pF Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 1568 pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V 292 pF Qg(tot) Total Gate Charge at 10V 188 nC Qgs Gate to Source Gate Charge VDS = 400 V, ID = 35 A, VGS = 10 V (Note 4) 55 nC Qgd Gate to Drain “Miller” Charge 73 nC ESR Equivalent Series Resistance f = 1 MHz 1.1 W SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS VDD = 400 V, ID = 35 A, VGS = 10 V, Rg = 2.2 W (Note 4) 43 ns 35 ns 110 ns 28 ns IS Maximum Continuous Source to Drain Diode Forward Current ISM Maximum Pulsed Source to Drain Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 35 A 70 A 175 A 1.3 V trr Reverse Recovery Time Qrr Reverse Recovery.


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