FDMC8010DC

MOSFET – N-Channel, DUAL COOL) 33, POWERTRENCH) 30 V, 157 A, 1.28 mW FDMC8010DC General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process. Advancements in both silicon and DUAL COOL package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction−to−Ambient thermal resistance. Features DUAL COOL Top Side Cooling PQFN Package Max rDS(on) = 1.28 mW at VGS = 10 V, ID = 37 A Max rDS(on) = 1.74 mW at VGS = 4.5 V, ID = 32 A High Performance Technology for Extremely Low rDS(on) These Devices are Pb−Free and are RoHS Compliant Applications Load Switch Motor Bridge Switch Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Volage (Note 4) ±20 V ID Drain Current −Continuous −Continuous −Continuous −Pulsed TC = 25°C (Note 6) TC = 100°C (Note 6) TA = 25°C (Note 1a) (Note 5) A 157 99 37 788 EAS Single Pulse Avalance Energy (Note 3) 337 mJ PD Power Dissipation TC = 25°C 50 W Power Dissipation TA = 25°C (Note 1a) 3.0 TJ, TSTG Operating and Storage Junction Temperature −55 to °C Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTI...