NTNS1K5N021Z

NTNS1K5N021Z MOSFET – Single, N-Channel, Small Signal, XDFN3, 0.62 x 0.42 x 0.4 mm 20 V, 220 mA Features Low Profile Ultra Small Package, XDFN3 (0.62 x 0.42 x 0.4 mm) for Extremely Space−Constrained Applications 1.5 V Gate Drive These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications Small Signal Load Switch High Speed Interfacing Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) t≤5s Steady State TA = 25°C TA = 85°C TA = 25°C TA = 25°C VDSS VGS ID PD 20 V ±8 V 220 mA 158 253 125 mW t≤5s 166 Pulsed Drain Current tp = 10 ms IDM 846 mA Operating Junction and Storage Temperature TJ, TSTG −55 to °C 150 Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) IS 200 mA TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using the minimum recommended pad size, or 2 mm2, 1 oz Cu. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2% www.onsemi.com V(BR)DSS 20 V RDS(on) MAX 1.5 W @ 4.5 V 1.8 W @ 3.3 V 2.2 W @ 2.5 V 3.3 W @ 1.8 V 5.0 W @ 1.5 V ID Max 220 mA N−CHANNEL MOSFET D (3) G (2) S (1) MARKI...