FGY100T120RWD

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L, 1200 V, 1.4 V, 100 A FGY100T120RWD Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TP247 3−lead package, FGY100T120RWD offers the optimum performance with low conduction losses and good switching controllability for a high efficiency operation in various applications like motor control, UPS, data center and high−power switch. Features Low Conduction Loss and Optimized Switching Maximum Junction Temperature − TJ = 175°C Positive Temperature Coefficient for Easy Parallel Operation High Current Capability 100% of the Parts are Dynamically Tested Short Circuit Rated RoHS Compliant Applications Motor Control UPS General Application Requiring High Power Switch MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector to Emitter Voltage Gate to Emitter Voltage Transient Gate to Emitter Voltage VCES 1200 V VGES ±20 ±30 Collector Current Power Dissipation Pulsed Collector Current TC = 25°C IC TC = 100°C TC = 25°C PD TC = 100°C TC = 25°C, ICM tp = 10 ms (Note 1) 200 A 100 1495 W 747 300 A Diode Forward Current Pulsed Diode Forward Current TC = 25°C IF 200 TC = 100°C 100 TC = 25°C, IFM 300 tp = 10 ms (Note 1) Short Circuit Withstand Time VGE = 15 V, VCC = 600 V, TC = 150°C Operating Junction and Storage Temperature TSC 5 ms TJ, TSTG −55 to 175 °C Lead Temperature for Sold...