FDMQ8403

MOSFET – N-Channel, POWERTRENCH), GreenBridget Series of High-Efficiency Bridge Rectifiers 100 V, 6 A, 110 mW FDMQ8403 General Description This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A Substantial Efficiency Benefit in PD Solutions This Device is Pb−Free, Halid Free and is RoHS Compliant Applications High−Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A − Continuous (Package Limited) TC = 25°C 6 − Continuous (Silicon Limited) TC = 25°C 9 − Continuous (Note 1a.) TA = 25°C 3.1 − Pulsed 12 PD Power Dissipation TC = 25°C 17 W Power Dissipation (Note 1a.) TA = 25°C 1.9 TJ, TSTG Operating and Storage Junction Temperature −55 to °C Range +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Rating RqJA Thermal Resistance, Junction to Ambient (Note 1a.) RqJA Thermal Resistance, Junction to Ambient (Note 1b.) Value Unit 65 °C/W 135 DATA SHEET www.onsemi.com VDSS 100 V RDS(ON) MAX 110 W @ 10 V ID MAX 6A G4 D1/D4 D3/S4 G3 S3 S3 Pin 1 G1 D1/D4 S1...