Dual N-Channel MOSFET
MOSFET – Dual, N-Channel, POWERTRENCH)
Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW
FDMD8540L
General Description Th...
Description
MOSFET – Dual, N-Channel, POWERTRENCH)
Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW
FDMD8540L
General Description This device includes two 40 V N−Channel MOSFETs in a dual
Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Features
Q1: N−Channel
Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A
Q2: N−Channel
Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A
Ideal for Flexible Layout in Primary Side of Bridge Topology 100% UIL Tested Kelvin High Side MOSFET Drive Pin−out Capability This Device is Pb−Free and are RoHS Compliant
Applications
POL Synchronous Dual One Phase Motor Half Bridge Half/Full Bridge Secondary Synchronous Rectification
www.onsemi.com
VDS 40 V
rDS(ON) MAX 1.5 mW @ 10 V 2.2 mW @ 4.5 V
ID MAX 156 A
Pin 1
D2/S1
D2/S1
D2/S1
S2
G2
D1
D1
D1 GR G1
Pin 1
Top
Bottom
PQFN8 5X6, 1.27P Power 5 x 6 CASE 483AT
MARKING DIAGRAM
$Y&Z&3&K FDMD 8540L
FDMD8540L = Specific Device Code
$Y
= ON Semiconductor Logo
&Z
= Assembly Plant Code
&3
= 3−Digit Date Code Format
&K
= 2−Digits Lot Run Traceability Data
© Semiconductor Components Industries, LLC, 2020
April, 2021 − Rev. 2
G1
G2
GR
D2/S1
D1
D2/S1
D1
D2/S1
ORDERING INFORMATION
See detailed ordering and shipping information on page 9 of this data sheet.
1
Publication Order Number...
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