FDMD8540L

MOSFET – Dual, N-Channel, POWERTRENCH) Q1: 40 V, 156 A, 1.5 mW Q2: 40 V, 156 A, 1.5 mW FDMD8540L General Description This device includes two 40 V N−Channel MOSFETs in a dual Power (5 mm x 6 mm) package. HS source and LS drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features Q1: N−Channel Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Q2: N−Channel Max rDS(on) = 1.5 mW at VGS = 10 V, ID = 33 A Max rDS(on) = 2.2 mW at VGS = 4.5 V, ID = 26 A Ideal for Flexible Layout in Primary Side of Bridge Topology 100% UIL Tested Kelvin High Side MOSFET Drive Pin−out Capability This Device is Pb−Free and are RoHS Compliant Applications POL Synchronous Dual One Phase Motor Half Bridge Half/Full Bridge Secondary Synchronous Rectification www.onsemi.com VDS 40 V rDS(ON) MAX 1.5 mW @ 10 V 2.2 mW @ 4.5 V ID MAX 156 A Pin 1 D2/S1 D2/S1 D2/S1 S2 G2 D1 D1 D1 GR G1 Pin 1 Top Bottom PQFN8 5X6, 1.27P Power 5 x 6 CASE 483AT MARKING DIAGRAM $Y&Z&3&K FDMD 8540L FDMD8540L = Specific Device Code $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = 3−Digit Date Code Format &K = 2−Digits Lot Run Traceability Data © Semiconductor Components Industries, LLC, 2020 April, 2021 − Rev. 2 G1 G2 GR D2/S1 D1 D2/S1 D1 D2/S1 ORDERING INFORMATION See detailed ordering and shipping information on page 9 of this data sheet. 1 Publication Order Number...