Document
PSMN3R5-80YSF
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in
LFPAK56E package
3 September 2021
Product data sheet
1. General description
NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications.
2. Features and benefits
• Low Qrr for higher efficiency and lower spiking • 150 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56E package
3. Applications
• Synchronous rectifier in AC-DC and DC-DC • Primary side switch in DC-DC • BLDC motor control • USB-PD adapters • Full-bridge and half-bridge applications • Flyback and resonant topologies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS
drain-source voltage
ID
drain current
Ptot
total power dissipation
Tj
junction temperature
Static characteristics
25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1
RDSon
drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C;
resistance
Fig. 12
VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13
Dynamic characteristics
QGD
gate-drain charge
QG(tot)
total gate charge
Avalanche ruggedness
ID = 25 A; VDS = 40 V; VGS = 10 V; Fig. 14; Fig. 15
EDS(AL)S
non-repetitive drainsource avalanche energy
ID = 57 A; Vsup ≤ 80 V; RGS = 50 Ω;
[1]
VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 126 µs; Fig. 4
Min Typ Max Unit
-
-
80
V
-
-
150 A
-
-
294 W
-55 -
175 °C
-
2.8 3.5 mΩ
-
4
5.3 mΩ
3.9 13.1 30
nC
37.5 75
112.5 nC
-
-
374 mJ
Nexperia
PSMN3R5-80YSF
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package
Symbol
Parameter
Source-drain diode
Qr
recovered charge
[1] Protected by 100% test
Conditions
IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V; Fig. 18
Min Typ Max Unit
-
25
-
nC
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to drain
1234
LFPAK56E; PowerSO8 (SOT1023)
Graphic symbol
D G mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN3R5-80YSF
LFPAK56E; Power-SO8
Description
plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch
Version SOT1023
7. Marking
Table 4. Marking codes Type number PSMN3R5-80YSF
Marking code 3F5S80J
8. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS VDGR VGS Ptot ID
IDM Tstg
drain-source voltage drain-gate voltage gate-source voltage total power dissipation drain current
peak drain current storage temperature
25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ
Tmb = 25 °C; Fig. 1 VGS = 10 V; Tmb = 25 °C; Fig. 2 VGS = 10 V; Tmb = 100 °C; Fig. 2 pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3
Min Max Unit
-
80
V
-
80
V
-20 20
V
-
294 W
-
150 A
-
135 A
-
765 A
-55 175 °C
PSMN3R5-80YSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 September 2021
© Nexperia B.V. 2021. All rights reserved
2 / 13
Nexperia
PSMN3R5-80YSF
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package
Symbol
Parameter
Conditions
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
Avalanche ruggedness
EDS(AL)S IAS
non-repetitive drain-
ID = 57 A; Vsup ≤ 80 V; RGS = 50 Ω;
[1]
source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped;
tp = 126 µs; Fig. 4
non-repetitive avalanche Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C;
[1]
current
RGS = 50 Ω; Fig. 4
[1] Protected by 100% test
Min Max Unit
-55 175 °C
-
260 °C
-
150 A
-
765 A
-
374 mJ
-
57
A
120
Pder (%)
80
03aa16
200
ID (A)
150
(1)
aaa-033252
100
40 50
0
0
50
100
150
200
Tmb (°C)
Fig. 1. Normalized total power dissipation as a function of mounting base temperature
0 0 25 50 75 100 125 150 175 200 Tmb (°C)
VGS ≥ 10 V (1) 150A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature.
Fig. 2. Continuous drain current as a function of mounting base temperature
PSMN3R5-80YSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
3 September 2021
© Nexperia B.V. 2021. All rights reserved
3 / 13
Nexperia
103 ID (A)
102
PSMN3R5-80YSF
NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package
Limit RDSon = VDS / ID
aaa-033254
tp = 10 µs 100 µs
10
DC
1 ms
1
10 ms
100 ms
10-1
10-1
1
10
102
103.