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PSMN3R5-80YSF Dataheets PDF



Part Number PSMN3R5-80YSF
Manufacturers nexperia
Logo nexperia
Description N-channel MOSFET
Datasheet PSMN3R5-80YSF DatasheetPSMN3R5-80YSF Datasheet (PDF)

PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package 3 September 2021 Product data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 150 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy r.

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PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package 3 September 2021 Product data sheet 1. General description NextPower 80 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for industrial and consumer applications. 2. Features and benefits • Low Qrr for higher efficiency and lower spiking • 150 A ID(max) – demonstrated continuous current rating • Low QG × RDSon FOM for high efficiency switching applications • Strong avalanche energy rating (Eas) • Avalanche rated and 100% tested • Ha-free and RoHS compliant LFPAK56E package 3. Applications • Synchronous rectifier in AC-DC and DC-DC • Primary side switch in DC-DC • BLDC motor control • USB-PD adapters • Full-bridge and half-bridge applications • Flyback and resonant topologies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig. 2 Tmb = 25 °C; Fig. 1 RDSon drain-source on-state VGS = 10 V; ID = 25 A; Tj = 25 °C; resistance Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 13 Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness ID = 25 A; VDS = 40 V; VGS = 10 V; Fig. 14; Fig. 15 EDS(AL)S non-repetitive drainsource avalanche energy ID = 57 A; Vsup ≤ 80 V; RGS = 50 Ω; [1] VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 126 µs; Fig. 4 Min Typ Max Unit - - 80 V - - 150 A - - 294 W -55 - 175 °C - 2.8 3.5 mΩ - 4 5.3 mΩ 3.9 13.1 30 nC 37.5 75 112.5 nC - - 374 mJ Nexperia PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package Symbol Parameter Source-drain diode Qr recovered charge [1] Protected by 100% test Conditions IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 40 V; Fig. 18 Min Typ Max Unit - 25 - nC 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 S source 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 1234 LFPAK56E; PowerSO8 (SOT1023) Graphic symbol D G mbb076 S 6. Ordering information Table 3. Ordering information Type number Package Name PSMN3R5-80YSF LFPAK56E; Power-SO8 Description plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch Version SOT1023 7. Marking Table 4. Marking codes Type number PSMN3R5-80YSF Marking code 3F5S80J 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDS VDGR VGS Ptot ID IDM Tstg drain-source voltage drain-gate voltage gate-source voltage total power dissipation drain current peak drain current storage temperature 25 °C ≤ Tj ≤ 175 °C 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; Fig. 1 VGS = 10 V; Tmb = 25 °C; Fig. 2 VGS = 10 V; Tmb = 100 °C; Fig. 2 pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 Min Max Unit - 80 V - 80 V -20 20 V - 294 W - 150 A - 135 A - 765 A -55 175 °C PSMN3R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2021 © Nexperia B.V. 2021. All rights reserved 2 / 13 Nexperia PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package Symbol Parameter Conditions Tj junction temperature Tsld(M) peak soldering temperature Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C Avalanche ruggedness EDS(AL)S IAS non-repetitive drain- ID = 57 A; Vsup ≤ 80 V; RGS = 50 Ω; [1] source avalanche energy VGS = 10 V; Tj(init) = 25 °C; unclamped; tp = 126 µs; Fig. 4 non-repetitive avalanche Vsup = 80 V; VGS = 10 V; Tj(init) = 25 °C; [1] current RGS = 50 Ω; Fig. 4 [1] Protected by 100% test Min Max Unit -55 175 °C - 260 °C - 150 A - 765 A - 374 mJ - 57 A 120 Pder (%) 80 03aa16 200 ID (A) 150 (1) aaa-033252 100 40 50 0 0 50 100 150 200 Tmb (°C) Fig. 1. Normalized total power dissipation as a function of mounting base temperature 0 0 25 50 75 100 125 150 175 200 Tmb (°C) VGS ≥ 10 V (1) 150A continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB, thermal design and operating temperature. Fig. 2. Continuous drain current as a function of mounting base temperature PSMN3R5-80YSF Product data sheet All information provided in this document is subject to legal disclaimers. 3 September 2021 © Nexperia B.V. 2021. All rights reserved 3 / 13 Nexperia 103 ID (A) 102 PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package Limit RDSon = VDS / ID aaa-033254 tp = 10 µs 100 µs 10 DC 1 ms 1 10 ms 100 ms 10-1 10-1 1 10 102 103.


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