BF822

BF822 NPN high voltage transistor 1 January 2023 Product data sheet 1. General description NPN high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package. PNP complement: BF823 2. Features and benefits Low current (max. 50 mA) High voltage (max. 300 V) 3. Applications Telephony and professional communication equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCBO VCEO collector-base voltage collector-emitter voltage IC collector current hFE DC current gain fT transition frequency Conditions open emitter open base VCE = 20 V; IC = 25 mA; Tamb = 25 °C VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C Min Typ Max Unit - - 250 V - - 250 V - - 50 - 60 - 50 mA - - MHz 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline 3 1 2 SOT23 Graphic symbol C B E sym021 Nexperia BF822 NPN high voltage transistor 6. Ordering information Table 3. Ordering information Type number Package Name BF822 SOT23 Description plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Version SOT23 7. Marking Table 4. Marking codes Type number BF822 [1] % = placeholder for manufacturing site code Marking code[1] 1X% 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VCBO VCEO VEBO IC...