STD5NM50AG

STD5NM50AG Datasheet Automotive-grade N-channel 500 V, 0.7 Ω typ., 7.5 A, MDmesh Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Order code STD5NM50AG VDS 500 V RDS(on) max. 0.8 Ω AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge Low gate input resistance ID 7.5 A Applications G(1) Switching applications S(3) Description AM01475v1_noZen This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with the company's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, this Power MOSFET boasts an overall dynamic performance which is superior to similar products on the market. Product status link STD5NM50AG Product summary Order code STD5NM50AG Marking D5NM50 Package DPAK Packing Tape and reel DS12724 - Rev 2 - April 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD5NM50AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Gate-source voltage VDGR Drain-gate voltage (RGS = 20 kΩ) VGS Gate- source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode reco...