7ANM60N

STB7ANM60N, STD7ANM60N Datasheet Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages TAB TAB 2 3 1 D2PAK 23 1 DPAK D(2, TAB) Features Order code STB7ANM60N STD7ANM60N VDS RDS(on) max. ID 600 V 0.9 Ω 5A AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Package D²PAK DPAK G(1) S(3) Applications Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status link STB7ANM60N STD7ANM60N Product summary Order code STB7ANM60N Marking 7ANM60N Package D²PAK Packing Tape and reel Order code STD7ANM60N Marking 7ANM60N Package DPAK Packing Tape and reel DS9116 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office. www.st.com STB7ANM60N, STD7ANM60N Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC ...