N-channel Power MOSFET
STB7ANM60N, STD7ANM60N
Datasheet
Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and...
Description
STB7ANM60N, STD7ANM60N
Datasheet
Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in D²PAK and DPAK packages
TAB
TAB
2
3 1 D2PAK
23 1
DPAK
D(2, TAB)
Features
Order code STB7ANM60N STD7ANM60N
VDS
RDS(on) max.
ID
600 V
0.9 Ω
5A
AEC-Q101 qualified 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
Package D²PAK DPAK
G(1) S(3)
Applications
Switching applications
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Product status link STB7ANM60N STD7ANM60N
Product summary
Order code
STB7ANM60N
Marking
7ANM60N
Package
D²PAK
Packing
Tape and reel
Order code
STD7ANM60N
Marking
7ANM60N
Package
DPAK
Packing
Tape and reel
DS9116 - Rev 3 - November 2018 For further information contact your local STMicroelectronics sales office.
www.st.com
STB7ANM60N, STD7ANM60N
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC ...
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