13N50DM2

STD13N50DM2AG Datasheet Automotive-grade N-channel 500 V, 320 mΩ typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) NG1D2TS3Z Features Order code STD13N50DM2AG VDS 500 V RDS(on ) max. 360 mΩ ID 11 A AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Product status STD13N50DM2AG Product summary Order code STD13N50DM2AG Marking 13N50DM2 Package DPAK Packing Tape and reel DS12210 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com STD13N50DM2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC= 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope dv/dt (3) MOSFET dv/dt ruggedness Tstg Storage temperature range Tj Operating junction ...