N-CHANNEL MOSFET
STW72N60DM2AG
Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datashe...
Description
STW72N60DM2AG
Automotive-grade N-channel 600 V, 0.037 Ω typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code STW72N60DM2AG
VDS 600 V
RDS(on) max.
0.042 Ω
ID 66 A
PTOT 446 W
3 2 1
TO-247
Figure 1: Internal schematic diagram D(2, TAB)
AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input
capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected
Applications
Switching applications
Description
This high voltage N-channel Power MOSFET is
G(1)
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
S(3)
Order code STW72N60DM2AG
AM01476v1_tab
Table 1: Device summary Marking
72N60DM2
Package TO-247
Packing Tube
October 2016
DocID027314 Rev 5
This is information on a product in full production.
1/12
www.st.com
Contents
Contents
STW72N60DM2AG
1 Electrical ratings ............................................................................. 3
2 Electrical characteristics ................................................................ 4
2.1 Electrical characteristics (curves) ...................................................... 6
3 Test circuits .....................................................................
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