STH47N60DM6-2AG

STH47N60DM6-2AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in an H²PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2,3) NCHG1DTABS23TZ Features Order code STH47N60DM6-2AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A AEC-Q101 qualified Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STH47N60DM6-2AG Product summary Order code STH47N60DM6-2AG Marking 47N60DM6 Package H²PAK-2 Packing Tape and reel DS12261 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. www.st.com STH47N60DM6-2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID (1) Drain current (pulsed) PTOT Total power dissi...