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STHU47N60DM6AG Dataheets PDF



Part Number STHU47N60DM6AG
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description N-channel Power MOSFET
Datasheet STHU47N60DM6AG DatasheetSTHU47N60DM6AG Datasheet (PDF)

STHU47N60DM6AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package TAB 7 1 HU3PAK Drain(TAB) Features Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the ext.

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STHU47N60DM6AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package TAB 7 1 HU3PAK Drain(TAB) Features Order code STHU47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STHU47N60DM6AG Product summary Order code STHU47N60DM6AG Marking 47N60DM6 Package HU3PAK Packing Tape and reel DS13046 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office. www.st.com STHU47N60DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt (2) Peak diode recovery voltage slope di/dt (3) Peak diode recovery current slope dv/dt (3) MOSFET dv/dt ruggedness TJ Operating junction temperature range Tstg Storage temperature range 1. Pulse width limited by safe operating area 2. ISD ≤ 36 A, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Symbol IAR EAS Table 3. Avalanche characteristics Parameter Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 100 V) Value ±25 36 22 137 250 100 1000 100 -55 to 150 Unit V A A W V/ns A/μs V/ns °C °C Value 0.5 30 Unit °C/W Value Unit 7 A 700 mJ DS13046 - Rev 3 page 2/15 STHU47N60DM6AG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4. On/off-state Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS= 0 V, ID = 1 mA IDSS Zero gate voltage drain current VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C(1) IGSS Gate body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 18 A 1. Specified By Design – Not tested in production. Min. Typ. Max. Unit 600 V 1 µA 200 ±5 µA 3.25 4.00 4.75 V 70 80 mΩ Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance - 2350 - pF Coss Output capacitance VDS = 100 V, f = 1 MHz, VGS = 0 V - 160 - pF Crss Reverse transfer capacitance - 2 - pF Coss eq. (1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 V - 416 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 1.6 - Ω Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDD = 480 V, ID = 36 A, VGS= 0 to 10 V (see Figure 15. Test circuit for gate charge behavior) - 55 - nC - 12 - nC - 31 - nC 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 6. Switching times Test conditions VDD= 300 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14. Switching times test circuit for resistive load and Figure 19. Switching time waveform) Min. Typ. Max. Unit - 23 - ns - 5.5 - ns - 57 - ns - 9 - ns DS13046 - Rev 3 page 3/15 STHU47N60DM6AG Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions ISD Source-drain current ISDM (1) Source-drain current (pulsed) VSD (2) trr Qrr IRRM trr Qrr IRRM Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 36 A, VGS = 0 V ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times) ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16. Test circuit for inductive load switching and diode recov.


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