Document
STHU47N60DM6AG
Datasheet
Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh DM6 Power MOSFET in an HU3PAK package
TAB 7
1 HU3PAK
Drain(TAB)
Features
Order code STHU47N60DM6AG
VDS 600 V
RDS(on) max. 80 mΩ
ID 36 A
• AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected • Excellent switching performance thanks to the extra driving source pin
Gate(1) Driver
source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTABZ
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status link STHU47N60DM6AG
Product summary
Order code STHU47N60DM6AG
Marking
47N60DM6
Package
HU3PAK
Packing
Tape and reel
DS13046 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office.
www.st.com
STHU47N60DM6AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
di/dt (3)
Peak diode recovery current slope
dv/dt (3) MOSFET dv/dt ruggedness
TJ
Operating junction temperature range
Tstg
Storage temperature range
1. Pulse width limited by safe operating area 2. ISD ≤ 36 A, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
RthJC
Thermal resistance, junction-to-case
RthJB (1) Thermal resistance, junction-to-board
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Symbol IAR EAS
Table 3. Avalanche characteristics Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 100 V)
Value ±25 36 22 137 250 100 1000 100
-55 to 150
Unit V
A
A W V/ns A/μs V/ns °C °C
Value 0.5 30
Unit °C/W
Value
Unit
7
A
700
mJ
DS13046 - Rev 3
page 2/15
STHU47N60DM6AG
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4. On/off-state
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage VGS= 0 V, ID = 1 mA
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 600 V VGS = 0 V, VDS = 600 V, TC = 125 °C(1)
IGSS
Gate body leakage current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source on-resistance VGS = 10 V, ID = 18 A
1. Specified By Design – Not tested in production.
Min. Typ. Max. Unit
600
V
1 µA
200
±5 µA
3.25 4.00 4.75 V
70 80 mΩ
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
- 2350 -
pF
Coss
Output capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
160
-
pF
Crss
Reverse transfer capacitance
-
2
-
pF
Coss eq. (1) Equivalent output capacitance
VDS = 0 to 480 V, VGS = 0 V
-
416
-
pF
RG
Intrinsic gate resistance
f = 1 MHz open drain
-
1.6
-
Ω
Qg
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDD = 480 V, ID = 36 A, VGS= 0 to 10 V
(see Figure 15. Test circuit for gate charge behavior)
-
55
-
nC
-
12
-
nC
-
31
-
nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
Symbol td(on) tr td(off) tf
Parameter Turn-on delay time Rise time Turn-off delay time Fall time
Table 6. Switching times
Test conditions
VDD= 300 V, ID = 18 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14. Switching times test circuit for resistive load and Figure 19. Switching time waveform)
Min. Typ. Max. Unit
-
23
-
ns
-
5.5
-
ns
-
57
-
ns
-
9
-
ns
DS13046 - Rev 3
page 3/15
STHU47N60DM6AG
Electrical characteristics
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
ISD
Source-drain current
ISDM (1)
Source-drain current (pulsed)
VSD (2) trr Qrr
IRRM trr Qrr
IRRM
Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge
Reverse recovery current
ISD = 36 A, VGS = 0 V
ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16. Test circuit for inductive load switching and diode recovery times)
ISD = 36 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16. Test circuit for inductive load switching and diode recov.