STHU36N60DM6AG

STHU36N60DM6AG Datasheet Automotive-grade N-channel 600 V, 84 mΩ typ., 29 A MDmesh DM6 Power MOSFET in an HU3PAK package TAB 7 1 HU3PAK Drain(TAB) Features Order code STHU36N60DM6AG VDS 600 V RDS(on) max. 99 mΩ ID 29 A AEC-Q101 qualified Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Excellent switching performance thanks to the extra driving source pin Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STHU36N60DM6AG Product summary Order code STHU36N60DM6AG Marking 36N60DM6 Package HU3PAK Packing Tape and reel DS13040 - Rev 3 - November 2021 For further information contact your local STMicroelectronics sales office. www.st.com STHU36N60DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) a...