STWA68N65DM6AG

STWA68N65DM6AG Datasheet Automotive-grade N-channel 650 V, 33 mΩ typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 long leads package Features Order code STWA68N65DM6AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A D(2, TAB) G(1) AEC-Q101 qualified Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications S(3) Switching applications AM01476v1_tab Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STWA68N65DM6AG Product summary Order code STWA68N65DM6AG Marking 68N65DM6AG Package TO-247 long leads Packing Tube DS13422 - Rev 1 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com STWA68N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) PTOT Drain current (pulsed) Total power dissipation at T...