SH32N65DM6AG

SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package 89 7 7 8 9 1 3 64 6 4 13 ACEPACK SMIT GADG060720221002SA 9 (DC+) 1 (GHS) 2 (KHS) 3, 4 (NC) 6 (GLS) 5 (KLS) 7 (U) 8 (DC-) Features Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A AQG 324 qualified Half-bridge power module 650 V blocking voltage Fast recovery body diode Very low switching energies Low package inductance Dice on direct bond copper (DBC) substrate Low thermal resistance Isolation rating of 3.4 kVrms/min Applications Switching applications Description This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches. Product status link SH32N65DM6AG Product summary Order code SH32N65DM6AG Marking H32N65DM6 Package ACEPACK SMIT Packing Tape and reel DS14049 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com SH32N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Sym...