STD9N65DM6AG

STD9N65DM6AG Datasheet Automotive-grade N-channel 650 V, 365 mΩ typ., 9 A MDmesh DM6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code STD9N65DM6AG VDS RDS(on) max. ID 650 V 440 mΩ 9A AEC-Q101 qualified Fast-recovery body diode Lower RDS(on) per area vs previous generation Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STD9N65DM6AG Product summary(1) Order code STD9N65DM6AG Marking 9N65DM6 Package DPAK Packing Tape and reel 1. The HTRB test was performed at 80% V(BR)DSS in compliance with AEC-Q101 rev. C. All the other tests were performed according to rev. D. DS13320 - Rev 1 - April 2020 For further information contact your local STMicroelectronics sales office. www.st.com STD9N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at ...