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SCT040H65G3AG Dataheets PDF



Part Number SCT040H65G3AG
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Datasheet SCT040H65G3AG DatasheetSCT040H65G3AG Datasheet (PDF)

SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT040H65G3AG VDS 650 V RDS(on) max. 55 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB .

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SCT040H65G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT040H65G3AG VDS 650 V RDS(on) max. 55 mΩ ID 30 A • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications • Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT040H65G3AG Product summary Order code SCT040H65G3AG Marking 40H65G3AG Package H²PAK-7 Packing Tape and reel DS13883 - Rev 2 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C IDM(2) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1. ID is limited by package. 2. Pulse width is limited by safe operating area. Symbol RthJC RthJA Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient SCT040H65G3AG Electrical ratings Value Unit 650 V -10 to 22 -5 to 18 V -11 to 25 30 A 30 160 A 221 W °C -55 to 175 °C Value 0.68 50 Unit °C/W °C/W DS13883 - Rev 2 page 2/14 SCT040H65G3AG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 3. On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Static drain-source on-resistance Test conditions VGS = 0 V, ID = 1 mA VGS = 0 V, VDS = 650 V VDS = 0 V, VGS = -10 to 22 V VDS = VGS, ID = 1 mA VGS = 15 V, ID = 20 A VGS = 18 V, ID = 20 A VGS = 18 V, ID = 20 A, TJ = 175 °C Min. Typ. Max. Unit 650 V 10 µA ±100 nA 1.8 3.0 4.2 V 50 40 55 mΩ 50 Symbol Ciss Coss Crss Qg Qgs Qgd Rg Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Table 4. Dynamic Test conditions VDS = 400 V, f = 1 MHz, VGS = 0 V VDD = 400 V, VGS = -5 to 18 V, ID = 20 A f = 1 MHz, ID = 0 A Min. Typ. Max. Unit - 920 - pF - 94 - pF - 13 - pF - 39.5 - nC - 11.5 - nC - 14.5 - nC - 1.4 - Ω Symbol Eon Eoff Table 5. Switching energy (inductive load) Parameter Turn-on switching energy Turn-off switching energy Test conditions VDD = 400 V, ID = 20 A, RG = 15 Ω, VGS = -5 V to 18 V Min. Typ. Max. Unit - 79 - µJ - 67 - µJ Symbol td(on) tf td(off) tr Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 6. Switching times Test conditions VDD = 400 V, ID = 20 A, RG = 15 Ω, VGS = -5 to 18 V Min. Typ. Max. Unit - 10 - ns - 17 - ns - 26 - ns - 8 - ns DS13883 - Rev 2 page 3/14 SCT040H65G3AG Electrical characteristics Table 7. Reverse SiC diode characteristics Symbol Parameter Test conditions ISD(1) TC = 25 °C Continuous diode forward current TC = 100 °C VSD Diode forward voltage ISD = 20 A, VGS = 0 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 20 A, di/dt = 1000 A/μs, VDD = 400 V 1. ISD is limited by package. Min. Typ. Max. Unit - 30 A - 30 - 2.8 V - 18 ns - 97 nC - 9 A DS13883 - Rev 2 page 4/14 SCT040H65G3AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID (A) IDM GADG190120221348SOA 10 2 10 1 OpiserlaimtioitnedinbtyhiRs DaSr(eona) RDS(on) max. 10 0 10 -1 10 -1 TJ ≤ 175 °C TC = 25 °C Single pulse 10 0 10 1 10 2 tp=1µs tp=10µs tp=100µs tp=1ms tp=10ms V(BR)DSS VDS (V) Figure 2. Maximum transient thermal impedance ZthJC (°C/W) duty=0.5 GADG190120221349ZTH 43 10 -1 0.05 2 10 -2 10 -3 10 -6 Single pulse 10 -5 10 -4 RthJC = 0.68 ℃/W duty = ton / T ton T 10 -3 10 -2 tp (s) Figure 3. Typical output characteristics (TJ = 25 °C) ID (A) VGS = 16, 18, 20 V 60 GADG190120221408OCH_25 VGS=14 V 50 VGS.


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