Document
SCT040H65G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Features
Order code SCT040H65G3AG
VDS 650 V
RDS(on) max. 55 mΩ
ID 30 A
• AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Source sensing pin for increased efficiency
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Applications
• Main inverter (electric traction) • DC/DC converter for EV/HEV • On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT040H65G3AG
Product summary
Order code
SCT040H65G3AG
Marking
40H65G3AG
Package
H²PAK-7
Packing
Tape and reel
DS13883 - Rev 2 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
Gate-source voltage
VGS
Gate-source voltage (recommended operating values)
Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. ID is limited by package. 2. Pulse width is limited by safe operating area.
Symbol RthJC RthJA
Table 2. Thermal data Parameter Thermal resistance, junction-to-case Thermal resistance, junction-to-ambient
SCT040H65G3AG
Electrical ratings
Value
Unit
650
V
-10 to 22
-5 to 18
V
-11 to 25
30 A
30
160
A
221
W
°C -55 to 175
°C
Value 0.68 50
Unit °C/W °C/W
DS13883 - Rev 2
page 2/14
SCT040H65G3AG
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Symbol V(BR)DSS
IDSS IGSS VGS(th)
RDS(on)
Table 3. On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage current Gate threshold voltage
Static drain-source on-resistance
Test conditions VGS = 0 V, ID = 1 mA VGS = 0 V, VDS = 650 V VDS = 0 V, VGS = -10 to 22 V VDS = VGS, ID = 1 mA VGS = 15 V, ID = 20 A VGS = 18 V, ID = 20 A VGS = 18 V, ID = 20 A, TJ = 175 °C
Min. Typ. Max. Unit
650
V
10 µA
±100 nA
1.8 3.0 4.2
V
50
40 55 mΩ
50
Symbol Ciss Coss Crss Qg Qgs Qgd Rg
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance
Table 4. Dynamic Test conditions
VDS = 400 V, f = 1 MHz, VGS = 0 V
VDD = 400 V, VGS = -5 to 18 V, ID = 20 A f = 1 MHz, ID = 0 A
Min. Typ. Max. Unit
-
920
-
pF
-
94
-
pF
-
13
-
pF
- 39.5 -
nC
- 11.5 -
nC
- 14.5 -
nC
-
1.4
-
Ω
Symbol Eon Eoff
Table 5. Switching energy (inductive load)
Parameter Turn-on switching energy Turn-off switching energy
Test conditions VDD = 400 V, ID = 20 A, RG = 15 Ω, VGS = -5 V to 18 V
Min. Typ. Max. Unit
-
79
-
µJ
-
67
-
µJ
Symbol td(on) tf td(off) tr
Parameter Turn-on delay time Rise time Turn-off delay time Fall time
Table 6. Switching times Test conditions
VDD = 400 V, ID = 20 A, RG = 15 Ω, VGS = -5 to 18 V
Min. Typ. Max. Unit
-
10
-
ns
-
17
-
ns
-
26
-
ns
-
8
-
ns
DS13883 - Rev 2
page 3/14
SCT040H65G3AG
Electrical characteristics
Table 7. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
ISD(1)
TC = 25 °C Continuous diode forward current
TC = 100 °C
VSD
Diode forward voltage
ISD = 20 A, VGS = 0 V
trr Qrr IRRM
Reverse recovery time Reverse recovery charge Reverse recovery current
ISD = 20 A, di/dt = 1000 A/μs, VDD = 400 V
1. ISD is limited by package.
Min. Typ. Max. Unit
-
30
A
-
30
-
2.8
V
-
18
ns
-
97
nC
-
9
A
DS13883 - Rev 2
page 4/14
SCT040H65G3AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
ID
(A)
IDM
GADG190120221348SOA
10 2 10 1
OpiserlaimtioitnedinbtyhiRs DaSr(eona)
RDS(on) max.
10 0 10 -1
10 -1
TJ ≤ 175 °C TC = 25 °C Single pulse
10 0
10 1
10 2
tp=1µs tp=10µs tp=100µs
tp=1ms tp=10ms V(BR)DSS VDS (V)
Figure 2. Maximum transient thermal impedance
ZthJC (°C/W)
duty=0.5
GADG190120221349ZTH
43
10 -1 0.05 2
10 -2 10 -3
10 -6
Single pulse 10 -5 10 -4
RthJC = 0.68 ℃/W duty = ton / T
ton T
10 -3 10 -2
tp (s)
Figure 3. Typical output characteristics (TJ = 25 °C)
ID (A)
VGS
=
16,
18,
20
V
60
GADG190120221408OCH_25
VGS=14 V
50
VGS.