SCTW35N65G2VAG
Datasheet
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
Features
Order code SCTW35N65G2VAG
VDS 650 V
RDS(on) typ. 55 mΩ
ID 45 A
HiP247
D(2, TAB)
G(1) S(3)
3 2 1
AEC-Q101 qualified Very fast and robust intrinsic body diode Low capacitance
Applications
Switching mode powe...
