SCT012H90G3AG

SCT012H90G3AG Datasheet Automotive-grade silicon carbide Power MOSFET 900 V, 12 mΩ typ., 110 A in an H²PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Features Order code SCT012H90G3AG VDS 900 V RDS(on) typ. 12 mΩ AEC-Q101 qualified Very low RDS(on) over the entire temperature range High speed switching performances Very fast and robust intrinsic body diode Source sensing pin for increased efficiency ID 110 A Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Applications Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT012H90G3AG Product summary Order code SCT012H90G3AG Marking 12H90G3AG Package H²PAK-7 Packing Tape and reel DS14085 - Rev 1 - September 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours ove...