Document
SCT10N120AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
Features
HiP247
3 2 1
D(2, TAB)
• AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance
Applications
• Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies
G(1) S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
Product status link SCT10N120AG
Product summary
Order code
SCT10N120AG
Marking
SCT10N120AG
Package
HiP247
Packing
Tube
DS12509 - Rev 3 - September 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
Tstg
Storage temperature range
Tj
Operating junction temperature range
1. Pulse width limited by safe operating area.
Symbol Rthj-case Rthj-amb
Table 2. Thermal data Parameter
Thermal resistance junction-case Thermal resistance junction-ambient
SCT10N120AG
Electrical ratings
Value
Unit
1200
V
-10 to 25
V
12
A
10
A
24
A
150
W
°C -55 to 200
°C
Value 1.17 40
Unit °C/W °C/W
DS12509 - Rev 3
page 2/14
SCT10N120AG
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol V(BR)DSS
Parameter
Drain-source breakdown voltage
IDSS
Zero gate voltage drain current
Test conditions
VGS = 0 V, ID = 1 mA
VDS = 1200 V, VGS = 0 V VDS = 1200 V, VGS = 0 V, TJ = 200 °C
(1)
IGSS
Gate-body leakage current
VDS = 0 V, VGS = -10 to 25 V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
VGS = 20 V, ID = 6 A
RDS(on)
Static drain-source onresistance
VGS = 20 V, ID = 6 A, TJ = 150 °C VGS = 20 V, ID = 6 A, TJ = 200 °C
1. Defined by design, not subject to production test.
Min. 1200
1.8
Typ.
3.5 500 520 580
Max.
10 100 100 690
Unit V µA µA nA V mΩ mΩ
mΩ
Symbol Ciss Coss Crss Qg Qgs Qgd Rg
Table 4. Dynamic
Parameter
Test conditions
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 400 V, f = 1 MHz, VGS = 0 V
Total gate charge Gate-source charge Gate-drain charge
VDD = 800 V, ID = 6 A, VGS = 0 to 20 V
Gate input resistance
f=1 MHz, ID=0 A
Min. Typ. Max. Unit
-
290
-
pF
-
30
-
pF
-
9
-
pF
-
22
-
nC
-
3
-
nC
-
10
-
nC
-
8
-
Ω
Table 5. Switching energy (inductive load)
Symbol Eon Eoff Eon
Parameter Turn-on switching energy Turn-off switching energy Turn-on switching energy
Eoff
Turn-off switching energy
Test conditions VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V TJ= 150 °C
Min. Typ. Max. Unit
-
90
-
µJ
-
30
-
µJ
-
104
-
µJ
-
33
-
µJ
DS12509 - Rev 3
page 3/14
SCT10N120AG
Electrical characteristics
Symbol td(on) tf td(off) tr
Parameter Turn-on delay time Fall time Turn-off delay time Rise time
Table 6. Switching times Test conditions
VDD = 800 V, ID = 6 A, RG = 10 Ω, VGS = -5 to 20 V
Min. Typ. Max. Unit
-
7
-
ns
-
17
-
ns
-
14
-
ns
-
12
-
ns
Table 7. Reverse SiC diode characteristics
Symbol VSD trr Qrr IRRM
Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current
Test conditions IF = 6 A, VGS = 0 V
ISD = 6 A, di/dt = 2000 A/µs VDD = 800 V, TJ=150 °C
Min
Typ.
Max
Unit
-
4.3
-
V
-
16
-
ns
-
107
-
nC
-
12
-
A
DS12509 - Rev 3
page 4/14
SCT10N120AG
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
ID
GIPG230520161114SOA
(A) Operation in this area is
limited by R DS(on)
10 1
10 0
T j ≤ 200 °C T c = 25°C single pulse
10 -1 10 -1
10 0
10 1
10 2
10 3
t p =100 µs
t p =1 ms t p =10 ms V DS (V)
Figure 3. Output characteristics (TJ= 25 °C)
ID (A)
10
V GS = 20 V
GIPG230520161115OCH_25
V GS =16 V
8
6
V GS =14 V
4
2
V GS =12 V
VGS =10 V
0
VGS =6 V
0 2 4 6 8 10 12 V DS (V)
Figure 2. Thermal impedance
K
GIPG230520161115ZTH
0.8
0.6
0.4
0.2
0.0 10 -6 10 -5 10 -4 1.