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SCT10N120AG Dataheets PDF



Part Number SCT10N120AG
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Automotive-grade silicon carbide Power MOSFET
Datasheet SCT10N120AG DatasheetSCT10N120AG Datasheet (PDF)

SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description .

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SCT10N120AG Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package Features HiP247 3 2 1 D(2, TAB) • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industrystandard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Product status link SCT10N120AG Product summary Order code SCT10N120AG Marking SCT10N120AG Package HiP247 Packing Tube DS12509 - Rev 3 - September 2022 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range Tj Operating junction temperature range 1. Pulse width limited by safe operating area. Symbol Rthj-case Rthj-amb Table 2. Thermal data Parameter Thermal resistance junction-case Thermal resistance junction-ambient SCT10N120AG Electrical ratings Value Unit 1200 V -10 to 25 V 12 A 10 A 24 A 150 W °C -55 to 200 °C Value 1.17 40 Unit °C/W °C/W DS12509 - Rev 3 page 2/14 SCT10N120AG Electrical characteristics 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 3. On/off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage IDSS Zero gate voltage drain current Test conditions VGS = 0 V, ID = 1 mA VDS = 1200 V, VGS = 0 V VDS = 1200 V, VGS = 0 V, TJ = 200 °C (1) IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA VGS = 20 V, ID = 6 A RDS(on) Static drain-source onresistance VGS = 20 V, ID = 6 A, TJ = 150 °C VGS = 20 V, ID = 6 A, TJ = 200 °C 1. Defined by design, not subject to production test. Min. 1200 1.8 Typ. 3.5 500 520 580 Max. 10 100 100 690 Unit V µA µA nA V mΩ mΩ mΩ Symbol Ciss Coss Crss Qg Qgs Qgd Rg Table 4. Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 400 V, f = 1 MHz, VGS = 0 V Total gate charge Gate-source charge Gate-drain charge VDD = 800 V, ID = 6 A, VGS = 0 to 20 V Gate input resistance f=1 MHz, ID=0 A Min. Typ. Max. Unit - 290 - pF - 30 - pF - 9 - pF - 22 - nC - 3 - nC - 10 - nC - 8 - Ω Table 5. Switching energy (inductive load) Symbol Eon Eoff Eon Parameter Turn-on switching energy Turn-off switching energy Turn-on switching energy Eoff Turn-off switching energy Test conditions VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V VDD = 800 V, ID = 6 A RG= 10 Ω, VGS = -5 to 20 V TJ= 150 °C Min. Typ. Max. Unit - 90 - µJ - 30 - µJ - 104 - µJ - 33 - µJ DS12509 - Rev 3 page 3/14 SCT10N120AG Electrical characteristics Symbol td(on) tf td(off) tr Parameter Turn-on delay time Fall time Turn-off delay time Rise time Table 6. Switching times Test conditions VDD = 800 V, ID = 6 A, RG = 10 Ω, VGS = -5 to 20 V Min. Typ. Max. Unit - 7 - ns - 17 - ns - 14 - ns - 12 - ns Table 7. Reverse SiC diode characteristics Symbol VSD trr Qrr IRRM Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions IF = 6 A, VGS = 0 V ISD = 6 A, di/dt = 2000 A/µs VDD = 800 V, TJ=150 °C Min Typ. Max Unit - 4.3 - V - 16 - ns - 107 - nC - 12 - A DS12509 - Rev 3 page 4/14 SCT10N120AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Safe operating area ID GIPG230520161114SOA (A) Operation in this area is limited by R DS(on) 10 1 10 0 T j ≤ 200 °C T c = 25°C single pulse 10 -1 10 -1 10 0 10 1 10 2 10 3 t p =100 µs t p =1 ms t p =10 ms V DS (V) Figure 3. Output characteristics (TJ= 25 °C) ID (A) 10 V GS = 20 V GIPG230520161115OCH_25 V GS =16 V 8 6 V GS =14 V 4 2 V GS =12 V VGS =10 V 0 VGS =6 V 0 2 4 6 8 10 12 V DS (V) Figure 2. Thermal impedance K GIPG230520161115ZTH 0.8 0.6 0.4 0.2 0.0 10 -6 10 -5 10 -4 1.


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