Automotive-grade silicon carbide Power MOSFET
SCT040H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
T...
Description
SCT040H120G3AG
Datasheet
Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package
TAB
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code SCT040H120G3AG
VDS 1200 V
RDS(on) typ. 40 mΩ
ID 40 A
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Applications
Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC)
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT040H120G3AG
Product summary
Order code
SCT040H120G3AG
Marking
40H120G3AG
Package
H²PAK-7
Packing
Tape and reel
DS14094 - Rev 2 - April 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
SCT040H120G3AG
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
Drain-source voltage
Gate-source voltage
VGS
Gate-source voltage (recommended operating values)
Gate-source tr...
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