SCTH100N120G2-AG

SCTH100N120G2-AG Datasheet Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package TAB 7 1 H2PAK-7 Drain (TAB) Gate (1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTAB Features Order code SCTH100N120G2-AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A AEC-Q101 qualified High speed switching performance Very fast and robust intrinsic body diode Low capacitance Applications Traction inverters DC-DC converters Solar inverters OBC Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTH100N120G2-AG Product summary Order code SCTH100N120G2-AG Marking 100N120AG Package H²PAK-7 Packing Tape and reel DS12783 - Rev 2 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCTH100N120G2-AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operational values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage...