SCTW100N120G2AG

SCTW100N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package Features Order code SCTW100N120G2AG VDS 1200 V RDS(on)typ. 30 mΩ ID 75 A HiP247 D(2, TAB) G(1) S(3) 3 2 1 AEC-Q101 qualified High speed switching performance Very fast and robust intrinsic body diode Low capacitances Very high operating junction temperature capability (TJ = 200 °C) Applications Traction for inverters DC-DC converters Solar inverters OBC AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Maturity status link SCTW100N120G2AG Device summary Order code SCTW100N120G2AG Marking SCT100N120G2AG Package HiP247 Packing Tube DS12781 - Rev 4 - July 2020 For further information contact your local STMicroelectronics sales office. www.st.com SCTW100N120G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operational values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C ID (1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg ...