STGO30H60DLLFBAG

STGO30H60DLLFBAG Datasheet Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package TAB Features TAB 8 8 1 TO-LL type B C(TAB) G(1) E(2, 3, 4, 5, 6, 7, 8) 1 AEC-Q101 qualified Maximum junction temperature: TJ = 175 °C Logic level gate drive High-speed switching series Minimized tail current VCE(sat) = 1.6 V (typ.) @ IC = 30 A Low VF soft-recovery co-packaged diode Tight parameter distribution Safer paralleling Low thermal resistance G1CTABE2345678 Applications Automotive injection Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGO30H60DLLFBAG Product summary Order code STGO30H60DLLFBAG Marking GO30H60DLL Package TO-LL type B Packing Tape and reel DS12913 - Rev 4 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGO30H60DLLFBAG Electrical ratings 1 Electrical ratings Symbol VCES IC ICP(1) VGE IF IFP(1) PTOT TSTG TJ 1. tp<1 μs. Table 1. Absolute maximum ratings Parameter Collector-emitter voltage (VGE = 0) Continuous collector cur...