IGBT
STGO30H60DLLFBAG
Datasheet
Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL pa...
Description
STGO30H60DLLFBAG
Datasheet
Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package
TAB
Features
TAB 8
8 1
TO-LL type B
C(TAB)
G(1)
E(2, 3, 4, 5, 6, 7, 8)
1
AEC-Q101 qualified
Maximum junction temperature: TJ = 175 °C
Logic level gate drive
High-speed switching series
Minimized tail current
VCE(sat) = 1.6 V (typ.) @ IC = 30 A
Low VF soft-recovery co-packaged diode
Tight parameter distribution
Safer paralleling
Low thermal resistance
G1CTABE2345678
Applications
Automotive injection
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Product status link STGO30H60DLLFBAG
Product summary
Order code STGO30H60DLLFBAG
Marking
GO30H60DLL
Package
TO-LL type B
Packing
Tape and reel
DS12913 - Rev 4 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
STGO30H60DLLFBAG
Electrical ratings
1
Electrical ratings
Symbol VCES
IC
ICP(1) VGE
IF
IFP(1) PTOT TSTG
TJ 1. tp<1 μs.
Table 1. Absolute maximum ratings Parameter
Collector-emitter voltage (VGE = 0) Continuous collector cur...
Similar Datasheet
- STGO30H60DLLFBAG IGBT - STMicroelectronics