STGWA80H65DFBAG

STGWA80H65DFBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads Features TO-247 long leads C(2, TAB) AEC-Q101 qualified High-speed switching series Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A Minimized tail current Tight parameter distribution Positive temperature VCE(sat) coefficient Soft and very fast recovery antiparallel diode Applications G(1) PFC High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA80H65DFBAG Product summary Order code STGWA80H65DFBAG Marking G80H65DFBAG Package TO-247 long leads Packing Tube DS14160 - Rev 1 - December 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGWA80H65DFBAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(2) Pulsed coll...