STGYA120M65DF2AG

STGYA120M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Features TAB 1 23 TAB 1 2 3 Max247 long leads C(2, TAB) G(1) E(3) NG1E3C2T AEC-Q101 qualified 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C Applications Heating system HV battery disconnect and fire-off system Main inverter (electric traction) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGYA120M65DF2AG Product summary Order code STGYA120M65DF2AG Marking G120M65DF2AG Package Max247 long leads Packing Tube DS11783 - Rev 5 - November 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGYA120M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltag...