ST25TB512-AT

ST25TB512-AT Datasheet 13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions -Unsawn wafer -Bumped and sawn wafer Product status link ST25TB512-AT Features ISO 14443-2 Type B air interface compliant ISO 14443-3 Type B frame format compliant 13.56 MHz carrier frequency 847 kHz subcarrier frequency 106 Kbit/second data transfer 8 bit Chip_ID based anticollision system 2 count-down binary counters with automated anti-tearing protection 64-bit Unique Identifier 512-bit EEPROM with write protect feature Read_block and Write_block (32 bits) Internal tuning capacitor: 68 pF 1 million erase/write cycles 40-year data retention Self-timed programming cycle 5 ms typical programming time Application Transport DS11456 - Rev 8 - February 2023 For further information contact your local STMicroelectronics sales office. www.st.com ST25TB512-AT Description 1 Description The ST25TB512-AT is a contactless memory, powered by an externally transmitted radio wave. It contains a 512-bit user EEPROM. The memory is organized as 128 blocks of 32 bits. The ST25TB512-AT is accessed via the 13.56 MHz carrier. Incoming data are demodulated and decoded from the received amplitude shift keying (ASK) modulation signal and outgoing data are generated by load variation using bit phase shift keying (BPSK) coding of a 847 kHz sub-carrier. The received ASK wave is 10% modulated. The data transfer rate between the ST25TB512-AT and the r...