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STPST12H100 Dataheets PDF



Part Number STPST12H100
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description power Schottky trench rectifier
Datasheet STPST12H100 DatasheetSTPST12H100 Datasheet (PDF)

Product label Product status link STPST12H100 Product summary IF(AV) 12 A VRRM 100 V Tj (max.) 175 °C VF (typ.) 0.570 V STPST12H100 Datasheet 100 V - 12 A power Schottky trench rectifier Features • High junction temperature capability • Low forward voltage drop • Low recovery charges • Reduces conduction, reverse and switching losses • Avalanche tested • Flat packages • ECOPACK2 compliant Applications • DC/DC converter • LED lighting • Flyback topology • Auxiliary power supply • Switc.

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Product label Product status link STPST12H100 Product summary IF(AV) 12 A VRRM 100 V Tj (max.) 175 °C VF (typ.) 0.570 V STPST12H100 Datasheet 100 V - 12 A power Schottky trench rectifier Features • High junction temperature capability • Low forward voltage drop • Low recovery charges • Reduces conduction, reverse and switching losses • Avalanche tested • Flat packages • ECOPACK2 compliant Applications • DC/DC converter • LED lighting • Flyback topology • Auxiliary power supply • Switch mode power supply (SMPS) Description This 12 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST12H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products. DS14185 - Rev 2 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com STPST12H100 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, with 2 anode terminals short-circuited) Symbol Parameter Value VRRM Repetitive peak reverse voltage 100 IF(AV) Average forward current, δ = 0.5, square wave Tc = 155 °C 12 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 230 IAS Single pulse avalanche current(1) Tj = 25°C, L = 300 µH, VDD = 15 V 16 Tstg Storage temperature range -65 to +175 Tj Maximum operating junction temperature(2) +175 1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Unit V A A A °C °C Symbol Rth(j-c) Junction to case Table 2. Thermal resistance parameter Parameter Typ. value Unit 1.0 °C/W For more information, please refer to the following application note: • AN5088: Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter IR(1) Reverse leakage current VF(2) Forward voltage drop 1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% Test conditions Tj = 125 °C VR = 70 V Tj = 25 °C Tj = 125 °C VR = 100 V Tj = 25 °C Tj = 125 °C IF = 6 A Tj = 25 °C Tj = 125 °C IF = 12 A Min. Typ. Max. Unit - 2.3 6.8 mA - 24 µA - 4.2 14 mA - 0.535 0.595 - 0.470 0.525 V - 0.640 0.710 - 0.570 0.625 To evaluate the conduction losses, use the following equation: P = 0.425 x IF(AV) + 0.0167 x IF2(RMS) For more information, please refer to the following application notes related to the power losses : • AN604: Calculation of conduction losses in a power rectifier • AN4021: Calculation of reverse losses on a power diode DS14185 - Rev 2 page 2/9 STPST12H100 Characteristics Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test) i(t), v(t) VCL_DUT IAS IL IDUT t tp Figure 2. Unclamped Inductive Switching Test circuit EAS = 1 2 ×L × IAS² × tp = L × IAS VCLDUT − VDD VCLDUT VCLDUT − VDD ≅ 1 2 × L × IAS² DS14185 - Rev 2 page 3/9 STPST12H100 Characteristics (curves) 1.1 Characteristics (curves) Figure 3. Average forward current versus case temperature (δ = 0.5) IF(AV)(A) 60 50 40 30 20 10 0 0 Tc(°C) 25 50 75 100 125 150 175 Figure 4. Relative variation of thermal impedance junction to case versus pulse duration 1.0 Zth(j-c) /Rth(j-c) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 Single pulse 0.1 0.0 1.E-04 1.E-03 1.E-02 1.E-01 tP(s) 1.E+00 Figure 5. Reverse leakage current versus reverse voltage applied (typical values) 1.E+05 IR(µA) 1.E+04 1.E+03 1.E+02 1.E+01 1.E+00 Tj = 150 °C Tj = 125 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C Tj = 25 °C 1.E-01 0 VR(V) 10 20 30 40 50 60 70 80 90 100 Figure 6. Junction capacitance versus reverse voltage applied (typical values) 10000 C(pF) F = 1 MHz VOSC = 30 mVRMS Tj = 25 °C 1000 100 0.1 VR(V) 1.0 10.0 100.0 Figure 7. Forward voltage drop versus forward current (typical values) 100.0 IF(A) 10.0 1.0 Tj = 25 °C Tj = 75 °C Tj = 125 °C Tj = 150 °C VF(V) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu= 70 µm) Rth(j-a) (°C/W) 120 Epoxy printed board FR4, copper thickness: 70 μm 100 PSMC (TO-277A) 80 60 40 20 SCu(cm²) 0 0 1 2 3 4 5 6 7 8 9 10 DS14185 - Rev 2 page 4/9 STPST12H100 Package information 2 Package information In order to meet environmen.


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