Document
Product label
Product status link STPST12H100
Product summary
IF(AV)
12 A
VRRM
100 V
Tj (max.)
175 °C
VF (typ.)
0.570 V
STPST12H100
Datasheet
100 V - 12 A power Schottky trench rectifier
Features
• High junction temperature capability • Low forward voltage drop • Low recovery charges • Reduces conduction, reverse and switching losses • Avalanche tested • Flat packages • ECOPACK2 compliant
Applications
• DC/DC converter • LED lighting • Flyback topology • Auxiliary power supply • Switch mode power supply (SMPS)
Description
This 12 A, 100 V rectifier is based on ST trench technology that achieves the best-inclass VF/IR trade-off for a given silicon surface. Integrated in flat and space-saving packages, this STPST12H100 trench rectifier is intended to be used in high frequency miniature switched mode power supplies. It is also an ideal candidate for auxiliary power supply in telecom, server, or smart metering. ST trench rectifiers are adapted to freewheeling, OR-ring or reverse polarity protection applications, and can be the perfect companion device to our transistors, drivers, or ST VIPer products.
DS14185 - Rev 2 - July 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STPST12H100
Characteristics
1
Characteristics
Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified, with 2 anode terminals short-circuited)
Symbol
Parameter
Value
VRRM Repetitive peak reverse voltage
100
IF(AV) Average forward current, δ = 0.5, square wave
Tc = 155 °C
12
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
230
IAS
Single pulse avalanche current(1)
Tj = 25°C, L = 300 µH, VDD = 15 V
16
Tstg Storage temperature range
-65 to +175
Tj
Maximum operating junction temperature(2)
+175
1. Please refer to Figure 1 and Figure 2 for the unclamped inductive switching test circuit, and waveform. 2. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Unit V A
A
A °C °C
Symbol Rth(j-c) Junction to case
Table 2. Thermal resistance parameter Parameter
Typ. value
Unit
1.0 °C/W
For more information, please refer to the following application note:
•
AN5088: Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics
Symbol
Parameter
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 125 °C
VR = 70 V
Tj = 25 °C Tj = 125 °C
VR = 100 V
Tj = 25 °C Tj = 125 °C
IF = 6 A
Tj = 25 °C Tj = 125 °C
IF = 12 A
Min. Typ. Max. Unit
-
2.3 6.8 mA
-
24 µA
-
4.2 14 mA
- 0.535 0.595
- 0.470 0.525 V
- 0.640 0.710
- 0.570 0.625
To evaluate the conduction losses, use the following equation:
P = 0.425 x IF(AV) + 0.0167 x IF2(RMS)
For more information, please refer to the following application notes related to the power losses :
•
AN604: Calculation of conduction losses in a power rectifier
•
AN4021: Calculation of reverse losses on a power diode
DS14185 - Rev 2
page 2/9
STPST12H100
Characteristics
Figure 1. Current and voltage waveforms for avalanche energy test across D.U.T (device under test)
i(t), v(t)
VCL_DUT
IAS IL
IDUT
t tp
Figure 2. Unclamped Inductive Switching Test circuit
EAS
=
1 2
×L
×
IAS²
×
tp =
L × IAS VCLDUT − VDD
VCLDUT VCLDUT − VDD
≅
1 2
×
L
× IAS²
DS14185 - Rev 2
page 3/9
STPST12H100
Characteristics (curves)
1.1
Characteristics (curves)
Figure 3. Average forward current versus case temperature (δ = 0.5)
IF(AV)(A) 60
50
40
30
20
10
0 0
Tc(°C)
25
50
75
100
125
150
175
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration
1.0 Zth(j-c) /Rth(j-c)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
0.1
0.0 1.E-04
1.E-03
1.E-02
1.E-01
tP(s) 1.E+00
Figure 5. Reverse leakage current versus reverse voltage applied (typical values)
1.E+05 IR(µA)
1.E+04 1.E+03 1.E+02 1.E+01 1.E+00
Tj = 150 °C Tj = 125 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C
Tj = 25 °C
1.E-01 0
VR(V) 10 20 30 40 50 60 70 80 90 100
Figure 6. Junction capacitance versus reverse voltage applied (typical values)
10000 C(pF)
F = 1 MHz VOSC = 30 mVRMS
Tj = 25 °C
1000
100 0.1
VR(V)
1.0
10.0
100.0
Figure 7. Forward voltage drop versus forward current (typical values)
100.0 IF(A)
10.0 1.0
Tj = 25 °C Tj = 75 °C Tj = 125 °C Tj = 150 °C
VF(V)
0.1 0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed
board FR4, eCu= 70 µm)
Rth(j-a) (°C/W)
120 Epoxy printed board FR4, copper thickness: 70 μm
100
PSMC (TO-277A)
80
60
40
20
SCu(cm²) 0
0
1
2
3
4
5
6
7
8
9
10
DS14185 - Rev 2
page 4/9
STPST12H100
Package information
2
Package information
In order to meet environmen.