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40N120IHL Dataheets PDF



Part Number 40N120IHL
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description IGBT
Datasheet 40N120IHL Datasheet40N120IHL Datasheet (PDF)

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features • Low Saturation Voltage using Trench with Fi.

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NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage. Features • Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Case Temperature in IH Cooker Application • Low Gate Charge • These are Pb−Free Devices Typical Applications • Inductive Heating • Consumer Appliances • Soft Switching ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Collector−emitter voltage Collector current @ TC = 25°C @ TC = 100°C VCES 1200 V IC A 80 40 Pulsed collector current, Tpulse limited by TJmax Diode forward current @ TC = 25°C @ TC = 100°C ICM 320 A IF A 80 40 Diode pulsed current, Tpulse limited IFM by TJmax Gate−emitter voltage VGE Power Dissipation PD @ TC = 25°C @ TC = 100°C 320 A $20 V W 260 104 Operating junction temperature range TJ −55 to +150 °C Storage temperature range Lead temperature for soldering, 1/8” from case for 5 seconds Tstg TSLD −55 to +150 °C 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com 40 A, 1200 V VCEsat = 1.90 V Eoff = 1.40 mJ C G E G C E TO−247 CASE 340L STYLE 4 MARKING DIAGRAM 40N120IHL AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device NGTB40N120IHLWG Package Shipping TO−247 30 Units / Rail (Pb−Free) © Semiconductor Components Industries, LLC, 2012 1 September, 2012 − Rev. 0 Publication Order Number: NGTB40N120IHLW/D NGTB40N120IHLWG THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−case, for Diode Thermal resistance junction−to−ambient Symbol RqJC RqJC RqJA Value 0.48 1.5 40 Unit °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Test Conditions STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited VGE = 0 V, IC = 500 mA Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate leakage current, collector−emitter short−circuited VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C VGE = VCE, IC = 400 mA VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C VGE = 20 V, VCE = 0 V DYNAMIC CHARACTERISTIC Input capacitance Output capacitance Reverse transfer capacitance VCE = 2.


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