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NGTB40N120IHLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Features
• Low Saturation Voltage using Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • Optimized for Low Case Temperature in IH Cooker Application • Low Gate Charge • These are Pb−Free Devices
Typical Applications
• Inductive Heating • Consumer Appliances • Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage
Collector current @ TC = 25°C @ TC = 100°C
VCES
1200
V
IC
A
80
40
Pulsed collector current, Tpulse limited by TJmax
Diode forward current @ TC = 25°C @ TC = 100°C
ICM
320
A
IF
A
80
40
Diode pulsed current, Tpulse limited
IFM
by TJmax
Gate−emitter voltage
VGE
Power Dissipation
PD
@ TC = 25°C
@ TC = 100°C
320
A
$20
V
W 260 104
Operating junction temperature range
TJ
−55 to +150 °C
Storage temperature range
Lead temperature for soldering, 1/8” from case for 5 seconds
Tstg TSLD
−55 to +150 °C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
http://onsemi.com
40 A, 1200 V VCEsat = 1.90 V Eoff = 1.40 mJ
C
G
E
G C E
TO−247 CASE 340L
STYLE 4
MARKING DIAGRAM
40N120IHL AYWWG
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Device NGTB40N120IHLWG
Package Shipping
TO−247 30 Units / Rail (Pb−Free)
© Semiconductor Components Industries, LLC, 2012
1
September, 2012 − Rev. 0
Publication Order Number: NGTB40N120IHLW/D
NGTB40N120IHLWG
THERMAL CHARACTERISTICS Rating
Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−case, for Diode Thermal resistance junction−to−ambient
Symbol RqJC RqJC RqJA
Value 0.48 1.5 40
Unit °C/W °C/W °C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Test Conditions
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, gate−emitter short−circuited
VGE = 0 V, IC = 500 mA
Collector−emitter saturation voltage
Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate leakage current, collector−emitter short−circuited
VGE = 15 V, IC = 40 A VGE = 15 V, IC = 40 A, TJ = 150°C
VGE = VCE, IC = 400 mA VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 150°C
VGE = 20 V, VCE = 0 V
DYNAMIC CHARACTERISTIC
Input capacitance
Output capacitance Reverse transfer capacitance
VCE = 2.