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X0115ML Dataheets PDF



Part Number X0115ML
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description 0.8A sensitive gate SCR thyristor
Datasheet X0115ML DatasheetX0115ML Datasheet (PDF)

X0115ML Datasheet 0.8 A sensitive gate SCR thyristor in SOT23-3L A G K A G K SOT23-3L Product status link X0115ML Product summary IT(RMS) 0.8 A VDRM/VRRM 600 V VDSM/VRSM 750 V IGT [30-150] µA Features • On-state rms current, 0.8 A sensitive • Repetitive peak off-state voltage, 600 V • Non-repetitive surge peak off-state voltage, 750 V • Narrow sensitive gate current range [30 to 150] µA • Compact SOT23-3L package: – Creepage distance of 1.1 mm – 9 mm² footprint Applications • Ground-.

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X0115ML Datasheet 0.8 A sensitive gate SCR thyristor in SOT23-3L A G K A G K SOT23-3L Product status link X0115ML Product summary IT(RMS) 0.8 A VDRM/VRRM 600 V VDSM/VRSM 750 V IGT [30-150] µA Features • On-state rms current, 0.8 A sensitive • Repetitive peak off-state voltage, 600 V • Non-repetitive surge peak off-state voltage, 750 V • Narrow sensitive gate current range [30 to 150] µA • Compact SOT23-3L package: – Creepage distance of 1.1 mm – 9 mm² footprint Applications • Ground-fault circuit interrupter (GFI) • Arc-fault circuit interrupter (AFCI) • Overvoltage crowbar protection in power supplies • Capacitive ignition circuits • Low consumption triggering switches Description Thanks to highly sensitive triggering levels, X0115ML SCR thyristor is suitable for all applications where available gate current is limited. The X0115ML offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI). The SOT23-3L package provides the smallest SCR footprint while keeping 1.1 mm creepage distance, guaranteeing 120 V functional insulation (UL-840) at level 2 pollution degree without extra certification. DS13776 - Rev 3 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com X0115ML Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameters IT(RMS) On-state RMS current (180° conduction angle) IT(AV) Average on-state current (180° conduction angle) ITSM Non repetitive surge peak on-state current (Tj initial = 25 °C) tp = 8.3 ms tp = 10 ms One surge every 500 ms, 50 surges tp = 8.3 ms I2t I2t value for fusing tp = 10 ms Critical rate of rise of on-state current dl/dt IG = 2 x IGT , tr ≤ 100 ns f = 60 Hz VDRM / VRRM Repetitive peak off-state voltage VDSM / VRSM Non repetitive surge peak off-state voltage tp = 10 ms IGM Peak forward gate current tp = 20 µs PG(AV) Average gate power dissipation Tstg Storage junction temperature range Tj Operating junction temperature range TC = 41 °C Tj = 25 °C TAMB = 105 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Value Unit 0.8 A 0.5 A 7.6 7 A 5 0.25 A2s 75 A/µs 600 V 750 V 1.2 A 0.2 W -40 to +150 °C -40 to +125 °C Symbol IGT VGT VGD VRG IH IL dV/dt Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Parameters Value VD = 12 V, RL = 33 Ω Min. 30 Max. 150 Max. 0.8 VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C IRG = 10 µA IT = 50 mA, gate open, RGK = 1 kΩ IG = 1.2 IGT, RGK = 1 kΩ VD = 67 % VDRM, gate open, RGK = 1 kΩ, Tj = 125 °C Min. 0.2 Min. 5 Max. 5 Max. 6 Min. 80 Unit µA V V V mA mA V/µs Symbol VTM VTO Rd Table 3. Static characteristics ITM = 1.6 A, tp = 380 µs Threshold on-state voltage Test conditions Dynamic resistance IDRM / IRRM VT = VDRM, VT = VRRM, RGK = 1 kΩ Value Unit Tj = 25 °C Max. 1.7 V Tj = 125 °C Max. 1.06 V Tj = 125 °C Max. 540 mΩ Tj = 25 °C 1 µA Max. Tj = 125 °C 150 µA DS13776 - Rev 3 page 2/10 X0115ML Characteristics (curves) Symbol Rth(j-l) Rth(j-a) Table 4. Thermal resistance Parameters Junction to lead (DC) Junction to ambient (DC) for 5 cm2 copper surface 1.1 Characteristics (curves) Value Unit Typ. 60 °C/W Typ. 400 Figure 1. Maximum average power dissipation versus average on-state current P(W) 1.0 0.8 0.6 α = 180 ° DC α = 120 ° α = 90 ° α = 60 ° α = 30 ° 0.4 360 ° 0.2 α IT(AV)(A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Figure 2. Average and DC on-state current versus lead temperature IT(AV)(A) 1.0 DC 0.8 0.6 α = 180 ° α = 120 ° 0.4 α = 90 ° α = 60 ° 0.2 α = 30 ° 0.0 TL(°C) 0 25 50 75 100 125 Figure 3. On-state characteristics (maximum values) 10.0 ITM(A) Tj max: 125 °C Vt0 = 1.06 V Rd = 540 mΩ Tj = 125 °C 1.0 Tj = 25 °C Figure 4. Average and D.C. on-state current versus ambient temperature IT(AV)(A) 0.3 DC 0.2 α = 180 ° 0.1 VTM(V) 0.1 0.0 1.0 2.0 3.0 4.0 5.0 0.0 0 Ta(°C) 25 50 75 100 125 DS13776 - Rev 3 page 3/10 X0115ML Characteristics (curves) Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration 1.00 K = [Zth(j-a)/ Rth(j-a)] Zth(j-c) Zth(j-a) 0.10 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 tP(s) 1.0E+03 Figure 6. Surge peak on-state current versus number of cycles 8 ITSM(A) 7 Non repetitive Tj = 25 °C 6 5 tp=10ms One cycle 4 3 Repetitive Tc = 41 °C 2 1 Number of cycles 0 1 10 100 1000 Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 1000 ITSM(A) dl/dt limitation A/µs 100 Tj initial = 25 °C ITSM 10 Figure 8. Relative variation of gate trigger current, holding current and latching current versu.


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