Document
X0115ML
Datasheet
0.8 A sensitive gate SCR thyristor in SOT23-3L
A
G K
A G
K SOT23-3L
Product status link X0115ML
Product summary
IT(RMS)
0.8 A
VDRM/VRRM
600 V
VDSM/VRSM
750 V
IGT
[30-150] µA
Features
• On-state rms current, 0.8 A sensitive • Repetitive peak off-state voltage, 600 V • Non-repetitive surge peak off-state voltage, 750 V • Narrow sensitive gate current range [30 to 150] µA • Compact SOT23-3L package:
– Creepage distance of 1.1 mm – 9 mm² footprint
Applications
• Ground-fault circuit interrupter (GFI) • Arc-fault circuit interrupter (AFCI) • Overvoltage crowbar protection in power supplies • Capacitive ignition circuits • Low consumption triggering switches
Description
Thanks to highly sensitive triggering levels, X0115ML SCR thyristor is suitable for all applications where available gate current is limited. The X0115ML offers a high blocking voltage of 600 V, and a surge peak voltage of 750 V, ideal for applications like ground fault circuit interrupter (GFCI) and arc fault circuit interrupters (AFCI). The SOT23-3L package provides the smallest SCR footprint while keeping 1.1 mm creepage distance, guaranteeing 120 V functional insulation (UL-840) at level 2 pollution degree without extra certification.
DS13776 - Rev 3 - January 2022 For further information contact your local STMicroelectronics sales office.
www.st.com
X0115ML
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Parameters
IT(RMS)
On-state RMS current (180° conduction angle)
IT(AV)
Average on-state current (180° conduction angle)
ITSM
Non repetitive surge peak on-state current (Tj initial = 25 °C)
tp = 8.3 ms tp = 10 ms
One surge every 500 ms, 50 surges
tp = 8.3 ms
I2t
I2t value for fusing
tp = 10 ms
Critical rate of rise of on-state current dl/dt
IG = 2 x IGT , tr ≤ 100 ns
f = 60 Hz
VDRM / VRRM Repetitive peak off-state voltage
VDSM / VRSM Non repetitive surge peak off-state voltage
tp = 10 ms
IGM
Peak forward gate current
tp = 20 µs
PG(AV)
Average gate power dissipation
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
TC = 41 °C
Tj = 25 °C
TAMB = 105 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C
Value
Unit
0.8
A
0.5
A
7.6
7
A
5
0.25
A2s
75
A/µs
600
V
750
V
1.2
A
0.2
W
-40 to +150 °C
-40 to +125 °C
Symbol
IGT
VGT VGD VRG
IH IL dV/dt
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Parameters
Value
VD = 12 V, RL = 33 Ω
Min. 30 Max. 150 Max. 0.8
VD = VDRM, RL = 3.3 kΩ, RGK = 1 kΩ, Tj = 125 °C IRG = 10 µA IT = 50 mA, gate open, RGK = 1 kΩ IG = 1.2 IGT, RGK = 1 kΩ VD = 67 % VDRM, gate open, RGK = 1 kΩ, Tj = 125 °C
Min. 0.2 Min. 5 Max. 5 Max. 6 Min. 80
Unit
µA
V V V mA mA V/µs
Symbol VTM VTO Rd
Table 3. Static characteristics
ITM = 1.6 A, tp = 380 µs Threshold on-state voltage
Test conditions
Dynamic resistance
IDRM / IRRM VT = VDRM, VT = VRRM, RGK = 1 kΩ
Value
Unit
Tj = 25 °C Max. 1.7
V
Tj = 125 °C Max. 1.06 V
Tj = 125 °C Max. 540 mΩ
Tj = 25 °C
1
µA
Max.
Tj = 125 °C
150 µA
DS13776 - Rev 3
page 2/10
X0115ML
Characteristics (curves)
Symbol Rth(j-l) Rth(j-a)
Table 4. Thermal resistance Parameters
Junction to lead (DC) Junction to ambient (DC) for 5 cm2 copper surface
1.1
Characteristics (curves)
Value Unit Typ. 60
°C/W Typ. 400
Figure 1. Maximum average power dissipation versus average on-state current
P(W) 1.0
0.8
0.6
α = 180 ° DC
α = 120 ° α = 90 °
α = 60 °
α = 30 °
0.4
360 °
0.2
α
IT(AV)(A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Figure 2. Average and DC on-state current versus lead temperature
IT(AV)(A) 1.0
DC 0.8
0.6 α = 180 °
α = 120 °
0.4
α = 90 °
α = 60 °
0.2
α = 30 °
0.0
TL(°C)
0
25
50
75
100
125
Figure 3. On-state characteristics (maximum values)
10.0 ITM(A)
Tj max: 125 °C Vt0 = 1.06 V Rd = 540 mΩ
Tj = 125 °C
1.0 Tj = 25 °C
Figure 4. Average and D.C. on-state current versus ambient temperature
IT(AV)(A) 0.3
DC
0.2 α = 180 °
0.1
VTM(V)
0.1
0.0
1.0
2.0
3.0
4.0
5.0
0.0 0
Ta(°C)
25
50
75
100
125
DS13776 - Rev 3
page 3/10
X0115ML
Characteristics (curves)
Figure 5. Relative variation of thermal impedance junction to case and junction to ambient versus pulse duration
1.00 K = [Zth(j-a)/ Rth(j-a)] Zth(j-c)
Zth(j-a)
0.10
0.01 1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
tP(s)
1.0E+03
Figure 6. Surge peak on-state current versus number of cycles
8 ITSM(A)
7
Non repetitive Tj = 25 °C
6
5
tp=10ms One cycle
4 3 Repetitive Tc = 41 °C
2
1 Number of cycles
0
1
10
100
1000
Figure 7. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms
1000 ITSM(A)
dl/dt limitation A/µs
100
Tj initial = 25 °C ITSM
10
Figure 8. Relative variation of gate trigger current, holding current and latching current versu.