SGT120R65AL

SGT120R65AL Datasheet 650 V, 75 mΩ typ., 15 A, e-mode PowerGaN transistor 1 2 34 PowerFLAT 5x6 HV for PowerGaN D(5,6,7,8) Features Order code VDS RDS(on) max. ID SGT120R65AL 650 V 120 mΩ 15 A Enhancement mode normally off transistor Very high switching speed High power management capability Extremely low capacitances Kelvin source pad for optimum gate driving Zero reverse recovery charge Series G-HEMT G(4) Applications KS(3) S(1,2) G4D5678S12KS3 Adapters for tablets, notebook and AIO USB type-C PD adapters and quick chargers Wireless chargers Description The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with a well established packaging technology. The resulting G-HEMT device provides extremely low conduction losses, high current capability and ultra fast switching operation to enable high power density and unbeatable efficiency performances. Product status link SGT120R65AL Product summary Order code SGT120R65AL Marking 120R65A Package PowerFLAT 5x6 HV for PowerGaN Packing Tape and reel DS13322 - Rev 11 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com SGT120R65AL Electrical ratings 1 Electrical ratings TC = 25 °C unless otherwise specified. Symbol VDS VGS ID IDM PTOT Tstg TJ Table 1. Absolute maximum ratings Parameter Drain-source voltage Drain-source voltage (transient, tp < 1 μs) Gate-source voltage Drain current (continuous) at TC = 25 °C Drain current...