STPSC10H065BY-TR

A K Product status STPSC10H065BY-TR Product summary Symbol Value IF(AV) 10 A VRRM 650 V T j(max.) 175 °C STPSC10H065BY-TR Datasheet Automotive 650 V power Schottky silicon carbide diode Features AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable ECOPACK compliant component Applications On board charger (OBC) Solar boost PFC Telecom power equipment Charging stations Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions. DS12496 - Rev 2 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com STPSC10H065BY-TR Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 °C unless otherwise specified) Symbol Parameter VRRM Repetitive peak reverse voltage Tj = -40 °C to + 175 °C IF(RMS) Forward rms current IF(AV) Average forward current Tc = 140 °C(1), DC IFSM Surge non repetitive forward current tp = 10...