STL325N4LF8AG

STL325N4LF8AG Datasheet Automotive N‑channel enhancement mode logic level 40 V, 0.75 mΩ max., 373 A STripFET F8 Power MOSFET in a PowerFLAT 5x6 4 3 2 1 PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 Features Order code STL325N4LF8AG VDS 40 V AEC-Q101 qualified MSL1 grade 175 °C operating temperature 100% avalanche tested Wettable flank package RDS(on) max. 0.75 mΩ ID 373 A Applications G(4) Switching applications S(1, 2, 3) 12 34 Top View AM15540v2 Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL325N4LF8AG Product summary Order code STL325N4LF8AG Marking 325N4LF8 Package PowerFLAT 5x6 Packing Tape and reel DS13900 - Rev 1 - April 2022 For further information contact your local STMicroelectronics sales office. www.st.com STL325N4LF8AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings (at Tc = 25 °C unless otherwise specified) Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±16 V ID (1) Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 373 A 264 IDM(1)(2)(3) Drain current (pulsed), tP = 10 µs 1492 A PTOT Total power dissipation at TC = 25 °C 188 W IAS Single pulse avalanche current (pulse width limited by TJ max.) ...