BULD741
High voltage fast-switching NPN power transistor
Features
■ High voltage capability ■ Low spread of dynamic par...
BULD741
High voltage fast-switching
NPN power
transistor
Features
■ High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed
Description
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and high voltage capability.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the
transistor to withstand an high collector current level during breakdown condition, without using the transil protection usually necessary in typical converters for lamp ballast.
Applications
■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies.
3 1
DPAK TO-252
IPAK TO-251
3
2 1
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
BULD741T4 BULD741-1
BULD741 BULD741
Package DPAK IPAK
July 2007
Rev 2
Packaging Tape & reel
Tube
1/11
www.st.com
11
Electrical ratings
1
Electrical ratings
Table 2. Symbol
Absolute maximum rating Parameter
VCES VCEO VEBO
IC ICM IB IBM Ptot Tstg TJ
Collector-emitter voltage (VBE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0, IB = 2A, tP < 10ms) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 5ms) Total dissipation at Tc = 25°C Storage temperature Max. operating junction temperature
Table 3. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
__max
BULD...