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STH200N10WF7-2 Datasheet, Equivalent, Power MOSFET.N-channel Power MOSFET N-channel Power MOSFET |
| Part | STH200N10WF7-2 |
|---|---|
| Description | N-channel Power MOSFET |
| Feature | STH200N10WF7-2
Datasheet
N-channel 100 V , 3. 2 mΩ typ. , 180 A, STripFET F7 Powe r MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3) DTG1S23N Z Features Order code VDS STH200N10 WF7-2 100 V • Best-in-class SOA cap ability • High current surge capabili ty • Extremely low on-resistance RDS (on) max. 4. 0 mΩ ID 180 A PTOT 340 W Applications • Hot-swap • Electro nic fuse • Load switch • In-rush cu rrent limiter Description This N-chann el Power MOSFET utilizes the STripFET F 7 technology with an enhanced trench ga te structure boosting linear mode withs tanding capability and providi . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | STH200N10WF7-2 |
|---|---|
| Description | N-channel Power MOSFET |
| Feature | STH200N10WF7-2
Datasheet
N-channel 100 V , 3. 2 mΩ typ. , 180 A, STripFET F7 Powe r MOSFET in an H2PAK-2 package TAB 23 1 H2PAK-2 D(TAB) G(1) S(2, 3) DTG1S23N Z Features Order code VDS STH200N10 WF7-2 100 V • Best-in-class SOA cap ability • High current surge capabili ty • Extremely low on-resistance RDS (on) max. 4. 0 mΩ ID 180 A PTOT 340 W Applications • Hot-swap • Electro nic fuse • Load switch • In-rush cu rrent limiter Description This N-chann el Power MOSFET utilizes the STripFET F 7 technology with an enhanced trench ga te structure boosting linear mode withs tanding capability and providi . |
| Manufacture | STMicroelectronics |
| Datasheet |
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