STP65N045M9

STP65N045M9 Datasheet N-channel 650 V, 39 mΩ typ., 55 A MDmesh M9 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) Features Order code VDS RDS(on) max. ID STP65N045M9 650 V 45 mΩ 55 A Worldwide best FOM RDS(on)*Qg among silicon-based devices Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested G(1) S(3) Applications High efficiency switching applications AM01475v1_noZen Description This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency. Product status link STP65N045M9 Product summary Order code STP65N045M9 Marking 65N045M9 Package TO-220 Packing Tube DS13506 - Rev 4 - May 2022 For further information contact your local STMicroelectronics sales office. www.st.com STP65N045M9 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID(1) Drain current (cont...