N-channel Power MOSFET
STD65N160M9
Datasheet
N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TA...
Description
STD65N160M9
Datasheet
N-channel 650 V, 132 mΩ typ., 20 A MDmesh M9 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
Features
Order code
VDS
RDS(on) max.
ID
STD65N160M9
650 V
160 mΩ
20 A
Worldwide best FOM RDS(on)*Qg among silicon-based devices Higher VDSS rating Higher dv/dt capability Excellent switching performance Easy to drive 100% avalanche tested Zener-protected
S(3)
AM01476v1_tab
Product status link STD65N160M9
Applications
High efficiency switching applications
Description
This N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on-resistance and reduced gate charge values, among all silicon based fast switching super-junction Power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Product summary
Order code
STD65N160M9
Marking
65N160M9
Package
DPAK
Packing
Tape and reel
DS14010 - Rev 3 - May 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD65N160M9
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID(1)
Dr...
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