STP80N240K6

STP80N240K6 Datasheet N-channel 800 V, 197 mΩ typ., 16 A MDmesh K6 Power MOSFET in a TO-220 package TAB TO-220 1 23 D(2, TAB) G(1) Features Order code VDS RDS(on) max. ID STP80N240K6 800 V 220 mΩ 16 A Worldwide best RDS(on) x area Worldwide best FOM (figure of merit) Ultra low gate charge 100% avalanche tested Zener-protected Applications Flyback converter Adapters for tablets, notebook and AIO LED lighting Description S(3) AM01476v1_tab This very high voltage N-channel Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best-in-class on-resistance per area and gate charge for applications requiring superior power density and high efficiency. Product status link STP80N240K6 Product summary Order code STP80N240K6 Marking 80N240K6 Package TO-220 Packing Tube DS13772 - Rev 3 - September 2022 For further information contact your local STMicroelectronics sales office. www.st.com STP80N240K6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope di/dt(2) Peak diode recovery current slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range T...