STL320N4LF8

STL320N4LF8 Datasheet N-channel enhancement mode logic level 40 V, 0.8 mΩ max., 360 A, STripFET F8 Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View GADG09062022 Features Order code STL320N4LF8 VDS 40 V MSL1 grade 175 °C operating temperature 100% avalanche tested RDS(on) max. 0.8 mΩ ID 360 A Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET F8 technology featuring an enhanced trench gate structure. It ensures very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL320N4LF8 Product summary Order code STL320N4LF8 Marking(1) 320N4LF8 Package PowerFLAT 5x6 Packing Tape and reel 1. For engineering samples marking, see PowerFLAT 5x6 marking information. DS13908 - Rev 2 - June 2022 For further information contact your local STMicroelectronics sales office. www.st.com STL320N4LF8 Electrical ratings 1 Electrical ratings TC = 25 °C, unless otherwise specified. Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C ID(1) Drain current (continuous) at TC = 100 °C 360 A 254 IDM(2)(3) Drain current (pulsed), tP = 10 µs 1440 A PTOT IAS Total power dissipation at TC = 25 °C Single pulse avalanche current (pulse width limited by TJ max.) 188 ...