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SCTWA70N120G2V Datasheet, Equivalent, Power MOSFET.Silicon carbide Power MOSFET Silicon carbide Power MOSFET |
| Part | SCTWA70N120G2V |
|---|---|
| Description | Silicon carbide Power MOSFET |
| Feature | SCTWA70N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ. , 91 A in an HiP247 long leads package HiP24 7 long leads D(2, TAB) Features Order code VDS RDS(on) typ. ID SCTWA70N1 20G2V 1200 V 21 mΩ 91 A • Very f ast and robust intrinsic body diode • Extremely low gate charge and input ca pacitance • Very high operating junct ion temperature capability (TJ = 200 ° C) Applications • Switching mode pow er supply • DC-DC converters • Indu strial motor control G(1) S(3) AM0147 5v1_noZen Description This silicon car bide Power MOSFET device has been devel oped using ST’s advanced and . |
| Manufacture | STMicroelectronics |
| Datasheet |
| Part | SCTWA70N120G2V |
|---|---|
| Description | Silicon carbide Power MOSFET |
| Feature | SCTWA70N120G2V
Datasheet
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ. , 91 A in an HiP247 long leads package HiP24 7 long leads D(2, TAB) Features Order code VDS RDS(on) typ. ID SCTWA70N1 20G2V 1200 V 21 mΩ 91 A • Very f ast and robust intrinsic body diode • Extremely low gate charge and input ca pacitance • Very high operating junct ion temperature capability (TJ = 200 ° C) Applications • Switching mode pow er supply • DC-DC converters • Indu strial motor control G(1) S(3) AM0147 5v1_noZen Description This silicon car bide Power MOSFET device has been devel oped using ST’s advanced and . |
| Manufacture | STMicroelectronics |
| Datasheet |
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