SCTWA70N120G2V

SCTWA70N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features Order code VDS RDS(on) typ. ID SCTWA70N120G2V 1200 V 21 mΩ 91 A Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200 °C) Applications Switching mode power supply DC-DC converters Industrial motor control G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTWA70N120G2V Product summary Order code SCTWA70N120G2V Marking SCT70N120G2 Package HiP247 long leads Packing Tube DS14087 - Rev 1 - October 2022 For further information contact your local STMicroelectronics sales office. www.st.com SCTWA70N120G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature ...